Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Fabrication methods for high performance lateral bipolar transistors

Fabrication methods for high performance lateral bipolar transistors

US Patent 4583106 · Granted Apr 15, 1986

Estimated economic value: $21,461,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Dual phase and hybrid phase shifting mask fabrication using a surface etch monit1995
Fabrication and laser deletion of microfuses1994
Structure and fabrication of SiCr microfuses1994
SiCr microfuses1994
Inverse T-gate FET transistor with lightly doped source and drain region1993
Method of forming an inverse T-gate FET transistor1992
Process of making BiCMOS devices having closely spaced device regions1991
Fabrication of dielectrically isolated integrated circuit devices1990
Chem-mech polishing method for producing coplanar metal/insulator films on a sub1990
Selective epitaxial growth structure and isolation1990
On-the-fly error correction1989
Schottky diode having limited area self-aligned guard ring and method for making1989