MH

Mark C. Hakey

IBM: 224 patents #130 of 70,183Top 1%
Globalfoundries: 1 patents #2,221 of 4,424Top 55%
📍 Colchester, VT: #1 of 432 inventorsTop 1%
🗺 Vermont: #12 of 4,968 inventorsTop 1%
Overall (All Time): #2,491 of 4,157,543Top 1%
228
Patents All Time

Issued Patents All Time

Showing 201–225 of 228 patents

Patent #TitleCo-InventorsDate
6150256 Method for forming self-aligned features Toshiharu Furukawa, Steven J. Holmes, David V. Horak, Paul A. Rabidoux 2000-11-21
6121651 Dram cell with three-sided-gate transfer device Toshiharu Furukawa, David V. Horak, Steven J. Holmes, Jack A. Mandelman 2000-09-19
6121128 Method for making borderless wordline for DRAM cell Steven J. Holmes, David V. Horak, Wendell P. Noble 2000-09-19
6114082 Frequency doubling hybrid photoresist having negative and positive tone components and method of preparing the same Steven J. Holmes, David V. Horak, Ahmad D. Katnani, Niranjan M. Patel, Paul A. Rabidoux 2000-09-05
6114725 Structure for folded architecture pillar memory cell Toshiharu Furukawa, Steven J. Holmes, David V. Horak, Howard L. Kalter, Jack A. Mandelman +2 more 2000-09-05
6107133 Method for making a five square vertical DRAM cell Toshiharu Furukawa, David V. Horak, William H. Ma, Jack A. Mandelman 2000-08-22
6100172 Method for forming a horizontal surface spacer and devices formed thereby Toshiharu Furukawa, Steven J. Holmes, David V. Horak, Paul A. Rabidoux 2000-08-08
6096598 Method for forming pillar memory cells and device formed thereby Toshiharu Furukawa, Steven J. Holmes, David V. Horak, Paul A. Rabidoux 2000-08-01
6090673 Device contact structure and method for fabricating same Archibald J. Allen, Toshiharu Furukawa, Edward F. O'Neil, Roger A. Verhelst, David V. Horak 2000-07-18
6066526 Method of making trench DRAM William H. Ma 2000-05-23
6063658 Methods of making a trench storage DRAM cell including a step transfer device David V. Horak, Toshiharu Furukawa, Steven J. Holmes, William H. Ma, Jack A. Mandelman 2000-05-16
6037194 Method for making a DRAM cell with grooved transfer device Gary B. Bronner, Toshiharu Furukawa, Steven J. Holmes, David V. Horak, Jack A. Mandelman +1 more 2000-03-14
6017810 Process for fabricating field effect transistor with a self-aligned gate to device isolation Toshiharu Furukawa, Steven J. Holmes, David V. Horak, Paul A. Rabidoux 2000-01-25
6014422 Method for varying x-ray hybrid resist space dimensions Diane C. Boyd, Toshiharu Furukawa, Steven J. Holmes, David V. Horak, William H. Ma +1 more 2000-01-11
6007968 Method for forming features using frequency doubling hybrid resist and device formed thereby Toshiharu Furukawa, Steven J. Holmes, David V. Horak, Paul A. Rabidoux 1999-12-28
5998835 High performance MOSFET device with raised source and drain Toshiharu Furukawa, Steven J. Holmes, David V. Horak, William H. Ma, Jack A. Mandelman 1999-12-07
5959325 Method for forming cornered images on a substrate and photomask formed thereby William J. Adair, Richard A. Ferguson, Steven J. Holmes, David V. Horak, Robert K. Leidy +3 more 1999-09-28
5956597 Method for producing SOI & non-SOI circuits on a single wafer Toshiharu Furukawa, Steven J. Holmes, David V. Horak, Paul A. Rabidoux 1999-09-21
5953607 Buried strap for trench storage capacitors in dram trench cells David V. Horak, Jack A. Mandelman, Wendell P. Noble 1999-09-14
5949700 Five square vertical dynamic random access memory cell Toshiharu Furukawa, David V. Horak, William H. Ma, Jack A. Mandelman 1999-09-07
5945707 DRAM cell with grooved transfer device Gary B. Bronner, Toshiharu Furukawa, Steven J. Holmes, David V. Horak, Jack A. Mandelman +1 more 1999-08-31
5831301 Trench storage dram cell including a step transfer device David V. Horak, Toshiharu Furukawa, Steven J. Holmes, William H. Ma, Jack A. Mandelman 1998-11-03
5776660 Fabrication method for high-capacitance storage node structures Steven J. Holmes, David V. Horak, William H. Ma 1998-07-07
5691239 Method for fabricating an electrical connect above an integrated circuit Steven J. Holmes, John M. Wursthorn 1997-11-25
5532518 Electrical connect and method of fabrication for semiconductor cube technology Steven J. Holmes, John M. Wursthorn 1996-07-02