MH

Mark C. Hakey

IBM: 224 patents #130 of 70,183Top 1%
Globalfoundries: 1 patents #2,221 of 4,424Top 55%
📍 Colchester, VT: #1 of 432 inventorsTop 1%
🗺 Vermont: #12 of 4,968 inventorsTop 1%
Overall (All Time): #2,491 of 4,157,543Top 1%
228
Patents All Time

Issued Patents All Time

Showing 176–200 of 228 patents

Patent #TitleCo-InventorsDate
6323082 Process for making a DRAM cell with three-sided gate transfer Toshiharu Furukawa, David V. Horak, Steven J. Holmes, Jack A. Mandelman 2001-11-27
6319759 Method for making oxide Toshiharu Furukawa, Steven J. Holmes, David V. Horak, William H. Ma 2001-11-20
6313492 Integrated circuit chip produced by using frequency doubling hybrid photoresist Steven J. Holmes, David V. Horak, Ahmad D. Katnani, Niranjan M. Patel, Paul A. Rabidoux 2001-11-06
6303272 Process for self-alignment of sub-critical contacts to wiring Toshiharu Furukawa, Steven J. Holmes, David V. Horak, Paul A. Rabidoux 2001-10-16
6281576 Method of fabricating structure for chip micro-joining William H. Ma 2001-08-28
6277543 Method for forming features using frequency doubling hybrid resist and device formed thereby Toshiharu Furukawa, Steven J. Holmes, David V. Horak, Paul A. Rabidoux 2001-08-21
6271555 Borderless wordline for DRAM cell Steven J. Holmes, David V. Horak, Wendell P. Noble 2001-08-07
6261933 Process for building borderless bitline, wordline amd DRAM structure David V. Horak, William H. Ma, Wendell P. Noble 2001-07-17
6258661 Formation of out-diffused bitline by laser anneal Toshiharu Furukawa, Steven J. Holmes, David V. Horak, Thomas S. Kanarsky 2001-07-10
6245488 Method for forming features using frequency doubling hybrid resist and device formed thereby Toshiharu Furukawa, Steven J. Holmes, David V. Horak, Paul A. Rabidoux 2001-06-12
6232170 Method of fabricating trench for SOI merged logic DRAM William H. Ma 2001-05-15
6228705 Overlay process for fabricating a semiconductor device Toshiharu Furukawa, Steven J. Holmes, David V. Horak, William H. Ma 2001-05-08
6225158 Trench storage dynamic random access memory cell with vertical transfer device Toshiharu Furukawa, David V. Horak, William H. Ma, Jack A. Mandelman 2001-05-01
6221680 Patterned recess formation using acid diffusion Steven J. Holmes, David V. Horak, Toshiharu Furukawa 2001-04-24
6221704 Process for fabricating short channel field effect transistor with a highly conductive gate Toshiharu Furukawa, Steven J. Holmes, David V. Horak, James S. Nakos, Paul A. Rabidoux 2001-04-24
6210866 Method for forming features using self-trimming by selective etch and device formed thereby Toshiharu Furukawa, Steven J. Holmes, David V. Horak, Paul A. Rabidoux 2001-04-03
6207493 Formation of out-diffused bitline by laser anneal Toshiharu Furukawa, Steven J. Holmes, David V. Horak, Thomas S. Kanarsky 2001-03-27
6207514 Method for forming borderless gate structures and apparatus formed thereby Toshiharu Furukawa, Steven J. Holmes, David V. Horak, Paul A. Rabidoux 2001-03-27
6207540 Method for manufacturing high performance MOSFET device with raised source and drain Toshiharu Furukawa, Steven J. Holmes, David V. Horak, William H. Ma, Jack A. Mandelman 2001-03-27
6194268 Printing sublithographic images using a shadow mandrel and off-axis exposure Toshiharu Furukawa, Steven J. Holmes, David V. Horak, Paul A. Rabidoux 2001-02-27
6190988 Method for a controlled bottle trench for a dram storage node Toshiharu Furukawa, Steven J. Holmes, David V. Horak, William H. Ma, James M. Never 2001-02-20
6184549 Trench storage dynamic random access memory cell with vertical transfer device Toshiharu Furukawa, David V. Horak, William H. Ma, Jack A. Mandelman 2001-02-06
6184151 Method for forming cornered images on a substrate and photomask formed thereby William J. Adair, Richard A. Ferguson, Steven J. Holmes, David V. Horak, Robert K. Leidy +3 more 2001-02-06
6184041 Fused hybrid resist shapes as a means of modulating hybrid resist space width Toshiharu Furukawa, Steven J. Holmes, David V. Horak, Paul A. Rabidoux 2001-02-06
6175128 Process for building borderless bitline, wordline and DRAM structure and resulting structure David V. Horak, William H. Ma, Wendell P. Noble 2001-01-16