Issued Patents All Time
Showing 2,501–2,525 of 2,819 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8653599 | Strained SiGe nanowire having (111)-oriented sidewalls | Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Thomas N. Adam | 2014-02-18 |
| 8653596 | Integrated circuit including DRAM and SRAM/logic | Bruce B. Doris, Terence B. Hook, Ali Khakifirooz, Pranita Kulkarni | 2014-02-18 |
| 8652888 | SOI device with DTI and STI | Bruce B. Doris, Ali Khakifirooz, Pranita Kerber | 2014-02-18 |
| 8652898 | Integrated circuit with a thin body field effect transistor and capacitor | Bruce B. Doris, Ali Khakifirooz, Ghavam G. Shahidi | 2014-02-18 |
| 8647939 | Non-relaxed embedded stressors with solid source extension regions in CMOS devices | Bruce B. Doris, Pranita Kerber, Ali Khakifirooz, Douglas C. La Tulipe, Jr. | 2014-02-11 |
| 8648388 | High performance multi-finger strained silicon germanium channel PFET and method of fabrication | Ali Khakifirooz, Thomas N. Adam, Alexander Reznicek | 2014-02-11 |
| 8647945 | Method of forming substrate contact for semiconductor on insulator (SOI) substrate | Geng Wang, Roger A. Booth, Jr., Joseph Ervin, Chengwen Pei, Ravi M. Todi | 2014-02-11 |
| 8647936 | Junction field effect transistor with an epitaxially grown gate structure | Tak H. Ning, Ali Khakifirooz, Pranita Kerber | 2014-02-11 |
| 8642415 | Semiconductor substrate with transistors having different threshold voltages | Thomas N. Adam, Bruce B. Doris, Balasubramanian S. Haran, Pranita Kulkarni, Alexander Reznicek | 2014-02-04 |
| 8637365 | Spacer isolation in deep trench | Joseph Ervin, Chengwen Pei, Ravi M. Todi, Geng Wang | 2014-01-28 |
| 8633085 | Dual-depth self-aligned isolation structure for a back gate electrode | Balasubramanian S. Haran, Ali Khakifirooz, Ghavam G. Shahidi | 2014-01-21 |
| 8629017 | Structure and method to form EDRAM on SOI substrate | Chengwen Pei, Herbert L. Ho, Subramanian S. Iyer, Byeong Y. Kim, Geng Wang +1 more | 2014-01-14 |
| 8629009 | Programmable high-k/metal gate memory device | Roger A. Booth, Jr., Chandrasekharan Kothandaraman, Chengwen Pei | 2014-01-14 |
| 8629502 | MOSFET with recessed channel film and abrupt junctions | Bruce B. Doris, Ali Khakifirooz, Pranita Kulkarni | 2014-01-14 |
| 8629504 | Extremely thin semiconductor-on-insulator (ETSOI) integrated circuit with on-chip resistors and method of forming the same | Bruce B. Doris, Ali Khakifirooz, Ghavam G. Shahidi | 2014-01-14 |
| 8629506 | Replacement gate CMOS | Haining Yang | 2014-01-14 |
| 8623712 | Bulk fin-field effect transistors with well defined isolation | Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2014-01-07 |
| 8617968 | Strained silicon and strained silicon germanium on insulator metal oxide semiconductor field effect transistors (MOSFETs) | Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2013-12-31 |
| 8618554 | Method to reduce ground-plane poisoning of extremely-thin SOI (ETSOI) layer with thin buried oxide | Bruce B. Doris, Ali Khakifirooz, Pranita Kulkarni, Ghavam G. Shahidi | 2013-12-31 |
| 8617956 | Method and structure for forming high-K/metal gate extremely thin semiconductor on insulator device | Bruce B. Doris, Ali Khakifirooz, Pranita Kulkarni | 2013-12-31 |
| 8617937 | Forming narrow fins for finFET devices using asymmetrically spaced mandrels | Bruce B. Doris, Ali Khakifirooz, Ghavam G. Shahidi | 2013-12-31 |
| 8610233 | Hybrid MOSFET structure having drain side schottky junction | Ali Khakifirooz, Pranita Kulkarni, Ghavam G. Shahidi | 2013-12-17 |
| 8604539 | Bulk fin-field effect transistors with well defined isolation | Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2013-12-10 |
| 8598664 | Field effect transistor (FET) and method of forming the FET without damaging the wafer surface | Bruce B. Doris, Yu Zhu | 2013-12-03 |
| 8598663 | Semiconductor structure having NFET and PFET formed in SOI substrate with underlapped extensions | Bruce B. Doris, Balasubramanian S. Haran, Ali Khakifirooz, Pranita Kulkarni, Ghavam G. Shahidi | 2013-12-03 |