Issued Patents All Time
Showing 26–50 of 52 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7355221 | Field effect transistor having an asymmetrically stressed channel region | Anil K. Chinthakindi, David R. Greenberg, Basanth Jagannathan, Marwan H. Khater, John J. Pekarik +1 more | 2008-04-08 |
| 7348250 | Bipolar structure with two base-emitter junctions in the same circuit | — | 2008-03-25 |
| 7329941 | Creating increased mobility in a bipolar device | Dureseti Chidambarrao, Marwan H. Khater | 2008-02-12 |
| 7288827 | Self-aligned mask formed utilizing differential oxidation rates of materials | Huajie Chen, Kathryn T. Schonenberg, Andreas D. Stricker, Jae-Sung Rieh | 2007-10-30 |
| 7217988 | Bipolar transistor with isolation and direct contacts | David C. Ahlgren, Francois Pagette, Christopher M. Schnabel, Anna W. Topol | 2007-05-15 |
| 7180157 | Bipolar transistor with a very narrow emitter feature | Marwan H. Khater, Francois Pagette, Andreas D. Stricker | 2007-02-20 |
| 7170083 | Bipolar transistor with collector having an epitaxial Si:C region | Marwan H. Khater, Rajendran Krishnasamy, Kathryn T. Schonenberg, Andreas D. Stricker | 2007-01-30 |
| 7144787 | Methods to improve the SiGe heterojunction bipolar device performance | Omer H. Dokumaci, Marwan H. Khater, Rajendran Krishnasamy, Kathryn T. Schonenberg | 2006-12-05 |
| 7102205 | Bipolar transistor with extrinsic stress layer | Dureseti Chidambarrao, Marwan H. Khater | 2006-09-05 |
| 6979884 | Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border | David C. Ahlgren, Marwan H. Khater, Richard P. Volant | 2005-12-27 |
| 6960820 | Bipolar transistor self-alignment with raised extrinsic base extension and methods of forming same | Marwan H. Khater, Francois Pagette | 2005-11-01 |
| 6940149 | Structure and method of forming a bipolar transistor having a void between emitter and extrinsic base | Rama Divakaruni, Marwan H. Khater, William R. Tonti | 2005-09-06 |
| 6927476 | Bipolar device having shallow junction raised extrinsic base and method for making the same | Seshadri Subbanna, Basanth Jagannathan, Kathryn T. Schonenberg, Shwu-Jen Jeng, Kenneth J. Stein +1 more | 2005-08-09 |
| 6864560 | Bipolar transistor structure with a shallow isolation extension region providing reduced parasitic capacitance | Marwan H. Khater, Jae-Sung Rieh, Andreas D. Stricker, Kathryn T. Schonenberg | 2005-03-08 |
| 6864517 | Bipolar structure with two base-emitter junctions in the same circuit | — | 2005-03-08 |
| 6858485 | Method for creation of a very narrow emitter feature | Marwan H. Khater, Francois Pagette, Andreas D. Stricker | 2005-02-22 |
| 6844225 | Self-aligned mask formed utilizing differential oxidation rates of materials | Huajie Chen, Kathryn T. Schonenberg, Andreas D. Stricker, Jae-Sung Rieh | 2005-01-18 |
| 6803642 | Bipolar device having non-uniform depth base-emitter junction | Jae-Sung Rieh | 2004-10-12 |
| 6800921 | Method of fabricating a polysilicon capacitor utilizing fet and bipolar base polysilicon layers | Douglas D. Coolbaugh, Seshadri Subbanna | 2004-10-05 |
| 6780695 | BiCMOS integration scheme with raised extrinsic base | Huajie Chen, Seshadri Subbanna, Basanth Jagannathan, David C. Ahlgren, David Angell +3 more | 2004-08-24 |
| 6670228 | Method of fabricating a polysilicon capacitor utilizing FET and bipolar base polysilicon layers | Douglas D. Coolbaugh, Seshadri Subbanna | 2003-12-30 |
| 6667521 | Bipolar transistor with raised extrinsic base fabricated in an integrated BiCMOS circuit | David C. Ahlgren, Feng-Yi Huang, Adam D. Ticknor | 2003-12-23 |
| 6531720 | Dual sidewall spacer for a self-aligned extrinsic base in SiGe heterojunction bipolar transistors | David R. Greenberg, Shwu-Jen Jeng | 2003-03-11 |
| 6506656 | Stepped collector implant and method for fabrication | Basanth Jagannathan, Shwu-Jen Jeng, Jeffrey B. Johnson | 2003-01-14 |
| 6492238 | Bipolar transistor with raised extrinsic base fabricated in an integrated BiCMOS circuit | David C. Ahlgren, Feng-Yi Huang, Adam D. Ticknor | 2002-12-10 |