Issued Patents All Time
Showing 26–50 of 64 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8536675 | Thermally insulated phase change material memory cells | Matthew J. Breitwisch, Roger W. Cheek, Eric A. Joseph, Chung H. Lam, Alejandro G. Schrott +1 more | 2013-09-17 |
| 8527438 | Producing spike-timing dependent plasticity in an ultra-dense synapse cross-bar array | Bryan L. Jackson, Dharmendra S. Modha | 2013-09-03 |
| 8466006 | Thermally insulated phase material cells | Matthew J. Breitwisch, Roger W. Cheek, Eric A. Joseph, Chung H. Lam, Alejandro G. Schrott +1 more | 2013-06-18 |
| 8447714 | System for electronic learning synapse with spike-timing dependent plasticity using phase change memory | Matthew J. Breitwisch, Roger W. Cheek, Chung H. Lam, Dharmendra S. Modha | 2013-05-21 |
| 8350316 | Phase change memory cells having vertical channel access transistor and memory plane | Hsiang-Lan Lung, Chung H. Lam, Ming-Hsiu Lee | 2013-01-08 |
| 8331164 | Compact low-power asynchronous resistor-based memory read operation and circuit | Seongwon Kim, Yong Liu | 2012-12-11 |
| 8311965 | Area efficient neuromorphic circuits using field effect transistors (FET) and variable resistance material | Matthew J. Breitwisch, Chung H. Lam, Dharmendra S. Modha | 2012-11-13 |
| 8275727 | Hardware analog-digital neural networks | Bruce G. Elmegreen, Ralph Linsker, Dennis M. Newns, Roger D. Traub | 2012-09-25 |
| 8238149 | Methods and apparatus for reducing defect bits in phase change memory | Yen-Hao Shih, Ming-Hsiu Lee, Chao-I Wu, Hsiang-Lan Lung, Chung H. Lam +2 more | 2012-08-07 |
| 8237144 | Polysilicon plug bipolar transistor for phase change memory | Hsiang-Lan Lung, Erh-Kun Lai, Chung H. Lam | 2012-08-07 |
| 8233317 | Phase change memory device suitable for high temperature operation | Matthew J. Breitwisch, Chung H. Lam, Simone Raoux, Alejandro G. Schrott, Daniel Krebs | 2012-07-31 |
| 8217380 | Polysilicon emitter BJT access device for PCRAM | Tak H. Ning, Chung H. Lam | 2012-07-10 |
| 8138056 | Thermally insulated phase change material memory cells with pillar structure | Matthew J. Breitwisch, Roger W. Cheek, Eric A. Joseph, Chung H. Lam, Alejandro G. Schrott +1 more | 2012-03-20 |
| 8138574 | PCM with poly-emitter BJT access devices | Tze-Chiang Chen, Chung H. Lam | 2012-03-20 |
| 8120937 | Ternary content addressable memory using phase change devices | Brian L. Ji, Chung H. Lam, Robert K. Montoye | 2012-02-21 |
| 8119528 | Nanoscale electrodes for phase change memory devices | Alejandro G. Schrott, Eric A. Joseph, Mary B. Rothwell, Matthew J. Breitwisch, Chung H. Lam +1 more | 2012-02-21 |
| 8116126 | Measurement method for reading multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definition | Matthew J. Breitwisch, Chung H. Lam | 2012-02-14 |
| 8107276 | Resistive memory devices having a not-and (NAND) structure | Matthew J. Breitwisch, Gary S. Ditlow, Michele M. Franceschini, Luis A. Lastras-Montano, Robert K. Montoye | 2012-01-31 |
| 8030635 | Polysilicon plug bipolar transistor for phase change memory | Hsiang-Lan Lung, Erh-Kun Lai, Chung H. Lam | 2011-10-04 |
| 8030634 | Memory array with diode driver and method for fabricating the same | Hsiang-Lan Lung, Min Yang, Thomas Happ | 2011-10-04 |
| 7965537 | Phase change memory with finite annular conductive path | Matthew J. Breitwisch, Chung H. Lam | 2011-06-21 |
| 7955958 | Method for fabrication of polycrystalline diodes for resistive memories | Thomas Happ, Hsiang-Lan Lung, Min Yang | 2011-06-07 |
| 7944740 | Multi-level cell programming of PCM by varying the reset amplitude | Chung H. Lam, Ming-Hsiu Lee, Thomas Nirschi | 2011-05-17 |
| 7902051 | Method for fabrication of single crystal diodes for resistive memories | Thomas Happ, Hsiang-Lan Lung | 2011-03-08 |
| 7894272 | Multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definition | Matthew J. Breitwisch, Chung H. Lam | 2011-02-22 |