Patent Leaderboard
USPTO Patent Rankings Data through Sept 30, 2025
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Bipin Rajendran — 64 Patents

IBM: 64 patents #1,202 of 70,183Top 2%
MCMacronix International Co.: 13 patents #141 of 1,241Top 15%
QAQimonda Ag: 7 patents #43 of 575Top 8%
White Plains, NY: #29 of 917 inventorsTop 4%
New York: #1,250 of 115,490 inventorsTop 2%
Overall (All Time): #34,753 of 4,157,543Top 1%
64 Patents All Time

Issued Patents All Time

Showing 51–64 of 64 patents

Patent #TitleCo-InventorsDate
7881089 Coding techniques for improving the sense margin in content addressable memories Michele M. Franceschini, Chung H. Lam, Luis A. Lastras 2011-02-01
7872889 High density ternary content addressable memory Chung H. Lam 2011-01-18
7868313 Phase change memory device and method of manufacture Matthew J. Breitwisch, Chung H. Lam, Hsiang-Lan Lung, Alejandro G. Schrott, Yu Zhu 2011-01-11
7863610 Integrated circuit including silicide region to inhibit parasitic currents Shoaib Hasan.Zaidi 2011-01-04
7811879 Process for PCM integration with poly-emitter BJT as access device Chung H. Lam 2010-10-12
7782646 High density content addressable memory using phase change devices Chung H. Lam 2010-08-24
7764533 Multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definition Matthew J. Breitwisch, Chung H. Lam 2010-07-27
7751217 Content addressable memory using phase change devices Chung H. Lam, Brian L. Ji, Robert K. Montoye 2010-07-06
7639527 Phase change memory dynamic resistance test and manufacturing methods Ming-Hsiu Lee, Chung H. Lam 2009-12-29
7606067 Method to create a uniformly distributed multi-level cell (MLC) bitstream from a non-uniform MLC bitstream Chung H. Lam 2009-10-20
7602631 Multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definition Matthew J. Breitwisch, Chung H. Lam 2009-10-13
7602632 Multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definition Matthew J. Breitwisch, Chung H. Lam 2009-10-13
7567473 Multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definition Matthew J. Breitwisch, Chung H. Lam 2009-07-28
7505334 Measurement method for reading multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definition Matthew J. Breitwisch, Chung H. Lam 2009-03-17