Issued Patents All Time
Showing 1–25 of 26 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8349722 | Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device | Tamotsu Owada, Hirofumi Watatani, Kengo Inoue, Atsuo Shimizu | 2013-01-08 |
| 8188602 | Semiconductor device having multilevel copper wiring layers and its manufacture method | Satoshi Otsuka | 2012-05-29 |
| 7642185 | Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device | Tamotsu Owada, Hirofumi Watatani, Ken Sugimoto | 2010-01-05 |
| 7579277 | Semiconductor device and method for fabricating the same | Tamotsu Owada, Hisaya Sakai | 2009-08-25 |
| 7541296 | Method for forming insulating film, method for forming multilayer structure and method for manufacturing semiconductor device | Tamotsu Owada, Hirofumi Watatani, Yoshihiro Nakata, Shirou Ozaki | 2009-06-02 |
| 7485570 | Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device | Tamotsu Owada, Hirofumi Watatani, Kengo Inoue, Atsuo Shimizu | 2009-02-03 |
| 7256118 | Semiconductor device using low-K material as interlayer insulating film and its manufacture method | Tamotsu Owada, Ken Sugimoto | 2007-08-14 |
| 7235866 | Low dielectric constant film material, film and semiconductor device using such material | Yoshihiro Nakata, Katsumi Suzuki, Ei Yano, Tamotsu Owada, Iwao Sugiura | 2007-06-26 |
| 7208405 | Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor device | Tamotsu Owada, Hirofumi Watatani, Ken Sugimoto | 2007-04-24 |
| 7060909 | Composition for forming low dielectric constant insulating film, method of forming insulating film using the composition and electronic parts having the insulating film produced thereby | — | 2006-06-13 |
| 6958525 | Low dielectric constant film material, film and semiconductor device using such material | Yoshihiro Nakata, Katsumi Suzuki, Ei Yano, Tamotsu Owada, Iwao Sugiura | 2005-10-25 |
| 6949830 | Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device | Tamotsu Owada, Hirofumi Watatani, Kengo Inoue, Atsuo Shimizu | 2005-09-27 |
| 6943431 | Semiconductor device using low-k material as interlayer insulating film and including a surface modifying layer | Tamotsu Owada, Hiroko Inoue, Ken Sugimoto | 2005-09-13 |
| 6737744 | Semiconductor device including porous insulating material and manufacturing method therefor | — | 2004-05-18 |
| 6707156 | Semiconductor device with multilevel wiring layers | Takashi Suzuki, Satoshi Otsuka, Tsutomu Hosoda, Hirofumi Watatani | 2004-03-16 |
| 6693046 | Method of manufacturing semiconductor device having multilevel wiring | Yukio Takigawa | 2004-02-17 |
| 6613834 | Low dielectric constant film material, film and semiconductor device using such material | Yoshihiro Nakata, Katsumi Suzuki, Ei Yano, Tamotsu Owada, Iwao Sugiura | 2003-09-02 |
| 5976618 | Process for forming silicon dioxide film | Daitei Shin, Yuki Komatsu, Hideki Harada | 1999-11-02 |
| 5949130 | Semiconductor integrated circuit device employing interlayer insulating film with low dielectric constant | Yoshihiro Nakata, Azuma Matsuura, Tomoaki Hayano | 1999-09-07 |
| 5770260 | Process for forming silicon dioxide film | Daitei Shin, Yuki Komatsu, Hideki Harada, Yoshihiro Nakata, Michiko Kobayashi +1 more | 1998-06-23 |
| 5484687 | Polysilphenylenesiloxane, production process thereof, and resist material and semiconductor device formed thereof | Keiji Watanabe, Akira Oikawa, Masaaki Yamagami, Takahisa Namiki | 1996-01-16 |
| 5240813 | Polysilphenylenesiloxane, production process thereof, and resist material and semiconductor device formed thereof | Keiji Watanabe, Akira Oikawa, Masaaki Yamagami, Takahisa Namiki | 1993-08-31 |
| 4988514 | Preparation of lower alkyl polysilsesquioxane and formation of insulating layer of silylated polymer on electronic circuit board | Yasuhiro Yoneda, Masashi Miyagawa, Kota Nishii, Azuma Matsuura | 1991-01-29 |
| 4863833 | Pattern-forming material and its production and use | Yasuhiro Yoneda, Masashi Miyagawa, Kota Nishii | 1989-09-05 |
| 4670299 | Preparation of lower alkyl polysilsesquioxane and formation of insulating layer of silylated polymer on electronic circuit board | Yasuhiro Yoneda, Masashi Miyagawa, Kota Nishii, Azuma Matsuura | 1987-06-02 |