KI

Kengo Inoue

Fujitsu Limited: 5 patents #6,029 of 24,456Top 25%
FL Fujitsu Semiconductor Limited: 3 patents #229 of 1,301Top 20%
FL Fujitsu Microelectronics Limited: 1 patents #212 of 624Top 35%
KU Keio University: 1 patents #190 of 781Top 25%
TO Toyota: 1 patents #15,335 of 26,838Top 60%
📍 Somalomo, CM: #175 of 1,329 inventorsTop 15%
Overall (All Time): #456,458 of 4,157,543Top 15%
11
Patents All Time

Issued Patents All Time

Showing 1–11 of 11 patents

Patent #TitleCo-InventorsDate
10814886 System of optimizing activation degree of occupant of vehicle Masaru Sakata, Miki KUJIME 2020-10-27
9349600 Semiconductor device manufacturing method and semiconductor device Satoshi Torii, Hideaki Matsumura, Hikaru Kokura, Etsuro Kawaguchi, Katsuaki Ookoshi +1 more 2016-05-24
8778814 Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device Tamotsu Owada, Shun-ichi Furuyama, Hirofumi Watantani, Atsuo Shimizu 2014-07-15
8349722 Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device Tamotsu Owada, Shun-ichi Fukuyama, Hirofumi Watatani, Atsuo Shimizu 2013-01-08
8352219 Numerical structure-analysis calculation system Kunihiro Takahashi, Toshiaki Sakurai, Tatsuya Nakada 2013-01-08
7626234 Semiconductor device with shallow trench isolation and its manufacture method Hiroyuki Ota 2009-12-01
7485570 Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device Tamotsu Owada, Shun-ichi Fukuyama, Hirofumi Watatani, Atsuo Shimizu 2009-02-03
7211480 Semiconductor device with shallow trench isolation and its manufacture method Hiroyuki Ota 2007-05-01
7183200 Method for fabricating a semiconductor device 2007-02-27
7037803 Manufacture of semiconductor device having STI and semiconductor device manufactured Toshifumi Mori, Ryou Nakamura, Hiroyuki Ohta, Takashi Saiki 2006-05-02
6949830 Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device Tamotsu Owada, Shun-ichi Fukuyama, Hirofumi Watatani, Atsuo Shimizu 2005-09-27