TS

Tab A. Stephens

FS Freeescale Semiconductor: 35 patents #38 of 3,767Top 2%
NU Nxp Usa: 3 patents #546 of 2,066Top 30%
AM AMD: 1 patents #5,683 of 9,279Top 65%
🗺 Texas: #2,702 of 125,132 inventorsTop 3%
Overall (All Time): #86,559 of 4,157,543Top 3%
38
Patents All Time

Issued Patents All Time

Showing 26–38 of 38 patents

Patent #TitleCo-InventorsDate
7491630 Undoped gate poly integration for improved gate patterning and cobalt silicide extendibility Mehul D. Shroff, Paul A. Grudowski, Mark D. Hall 2009-02-17
7339241 FinFET structure with contacts Marius Orlowski 2008-03-04
7235471 Method for forming a semiconductor device having a silicide layer Dharmesh Jawarani 2007-06-26
7208424 Method of forming a semiconductor device having a metal layer Brian J. Goolsby, Bich-Yen Nguyen, Voon-Yew Thean 2007-04-24
7199429 Semiconductor device having an organic anti-reflective coating (ARC) and method therefor Douglas M. Reber, Mark D. Hall, Kurt H. Junker, Kyle Patterson, Edward K. Theiss +2 more 2007-04-03
7132327 Decoupled complementary mask patterning transfer method Chong-Cheng Fu, Charles F. King 2006-11-07
7091071 Semiconductor fabrication process including recessed source/drain regions in an SOI wafer Voon-Yew Thean, Brian J. Goolsby, Bich-Yen Nguyen, Thien T. Nguyen 2006-08-15
7074713 Plasma enhanced nitride layer Jian Chen, Stanley M. Filipiak, Yongjoo Jeon 2006-07-11
7015517 Semiconductor device incorporating a defect controlled strained channel structure and method of making the same John M. Grant 2006-03-21
6972255 Semiconductor device having an organic anti-reflective coating (ARC) and method therefor Douglas M. Reber, Mark D. Hall, Kurt H. Junker, Kyle Patterson, Edward K. Theiss +2 more 2005-12-06
6951783 Confined spacers for double gate transistor semiconductor fabrication process Leo Mathew, Rode R. Mora, Bich-Yen Nguyen, Anne Vandooren 2005-10-04
6919258 Semiconductor device incorporating a defect controlled strained channel structure and method of making the same John M. Grant 2005-07-19
6831350 Semiconductor structure with different lattice constant materials and method for forming the same Chun-Li Liu, Alexander L. Barr, John M. Grant, Bich-Yen Nguyen, Marius Orlowski +2 more 2004-12-14