Issued Patents All Time
Showing 1–25 of 43 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11905618 | Large diameter silicon carbide single crystals and apparatus and method of manufacture thereof | Ilya Zwieback, Avinash Gupta, Varatharajan Rengarajan | 2024-02-20 |
| 11035054 | Large diameter silicon carbide single crystals and apparatus and method of manufacture thereof | Ilya Zwieback, Avinash Gupta, Varatharajan Rengarajan | 2021-06-15 |
| RE48378 | Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof | Ilya Zwieback, Ping Wu, Varatharajan Rengarajan, Avinash Gupta, Thomas E. Anderson +2 more | 2021-01-05 |
| 10793972 | High quality silicon carbide crystals and method of making the same | Avinash Gupta, Mark Spiridonovich Ramm, Ilya Zwieback, Varatharajan Rengarajan, Gary E. Ruland | 2020-10-06 |
| RE46315 | Large diameter, high quality SiC single crystals, method and apparatus | Ilya Zwieback, Thomas E. Anderson, Andrew E. Souzis, Gary E. Ruland, Avinash Gupta +2 more | 2017-02-21 |
| 9263266 | Group III nitride articles and methods for making same | Andrew D. Hanser, Lianghong Liu, Edward A. Preble, Denis Tsvetkov, N. Mark Williams | 2016-02-16 |
| 9090989 | Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof | Ilya Zwieback, Ping Wu, Varatharajan Rengarajan, Avinash Gupta, Thomas E. Anderson +2 more | 2015-07-28 |
| 9082890 | Group III nitride articles having nucleation layers, transitional layers, and bulk layers | Andrew D. Hanser, Lianghong Liu, Edward A. Preble, Denis Tsvetkov, N. Mark Williams | 2015-07-14 |
| 8871556 | Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement | Edward A. Preble, Lianghong Liu, Andrew D. Hanser, N. Mark Williams | 2014-10-28 |
| 8741413 | Large diameter, high quality SiC single crystals, method and apparatus | Ilya Zwieback, Thomas E. Anderson, Andrew E. Souzis, Gary E. Ruland, Avinash Gupta +2 more | 2014-06-03 |
| 8728236 | Low dislocation density III-V nitride substrate including filled pits and process for making the same | Robert P. Vaudo | 2014-05-20 |
| 8637848 | Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement | Edward A. Preble, Lianghong Liu, Andrew D. Hanser, N. Mark Williams | 2014-01-28 |
| 8562937 | Production of carbon nanotubes | J. Donald Carruthers, Luping Wang | 2013-10-22 |
| 8435879 | Method for making group III nitride articles | Andrew D. Hanser, Lianghong Liu, Edward A. Preble, Denis Tsvetkov, Nathaniel Mark Williams | 2013-05-07 |
| 8378463 | Orientation of electronic devices on mis-cut substrates | George R. Brandes, Robert P. Vaudo | 2013-02-19 |
| 8349711 | Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement | Edward A. Preble, Lianghong Liu, Andrew D. Hanser, N. Mark Williams | 2013-01-08 |
| 8212259 | III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substrates | Jeffrey S. Flynn, George R. Brandes, Robert P. Vaudo, David Keogh, Barbara E. Landini | 2012-07-03 |
| 8202793 | Inclusion-free uniform semi-insulating group III nitride substrates and methods for making same | Edward A. Preble, Denis Tsvetkov, Andrew D. Hanser, N. Mark Williams | 2012-06-19 |
| 8043731 | Vicinal gallium nitride substrate for high quality homoepitaxy | Robert P. Vaudo, Jeffrey S. Flynn, George R. Brandes | 2011-10-25 |
| 7972711 | Large area, uniformly low dislocation density GaN substrate and process for making the same | Robert P. Vaudo | 2011-07-05 |
| 7897490 | Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement | Edward A. Preble, Lianghong Liu, Andrew D. Hanser, N. Mark Williams | 2011-03-01 |
| 7884447 | Laser diode orientation on mis-cut substrates | George R. Brandes, Robert P. Vaudo | 2011-02-08 |
| 7879147 | Large area, uniformly low dislocation density GaN substrate and process for making the same | Robert P. Vaudo | 2011-02-01 |
| 7777217 | Inclusion-free uniform semi-insulating group III nitride substrate and methods for making same | Edward A. Preble, Denis Tsvetkov, Andrew D. Hanser, N. Mark Williams | 2010-08-17 |
| 7700203 | Vicinal gallium nitride substrate for high quality homoepitaxy | Robert P. Vaudo, Jeffrey S. Flynn, George R. Brandes | 2010-04-20 |