DK

David Keogh

WT Wildcat Discovery Technologies: 10 patents #9 of 36Top 25%
AC Advanced Technology & Materials Co.: 1 patents #255 of 410Top 65%
CR Cree: 1 patents #444 of 639Top 70%
IU Iowa State University: 1 patents #700 of 1,643Top 45%
Samsung: 1 patents #49,284 of 75,807Top 70%
Overall (All Time): #340,522 of 4,157,543Top 9%
14
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
12166147 Thin-film crystalline silicon solar cell using a nanoimprinted photonic-plasmonic back-reflector structure Vikram L. Dalal 2024-12-10
10205167 High energy materials for a battery and methods for making and use Wei Tong, Steven Kaye, Cory O'Neill 2019-02-12
9985280 High energy materials for a battery and methods for making and use Wei Tong, Steven Kaye, Cory O'Neill 2018-05-29
9490475 High energy cathode for a battery Cory O'Neill, Steven Kaye, Marissa Caldwell 2016-11-08
9337472 Cathode for a battery Marissa Caldwell, Steven Kaye, Cory O'Neill, Wei Tong 2016-05-10
9246171 Cathode active material, and cathode and lithium battery including the material Byung-Jin Choi, Jae-gu Yoon, Myung Hoon Kim, Jin-hwan Park, Steven Kaye +1 more 2016-01-26
9159994 High energy materials for a battery and methods for making and use Wei Tong, Steven Kaye, Cory O'Neill 2015-10-13
9153818 Lithium sulfide cathode material with transition metal coating Marissa Caldwell, Steven Kaye 2015-10-06
9099735 Cathode for a battery Marissa Caldwell, Steven Kaye, Cory O'Neill, Wei Tong 2015-08-04
9093703 High energy materials for a battery and methods for making and use Steven Kaye, Cory O'Neill 2015-07-28
8916062 High energy materials for a battery and methods for making and use Wei Tong, Steven Kaye, Cory O'Neill 2014-12-23
8795887 Materials prepared by metal extraction Marissa Caldwell, Steven Kaye, Wei Tong, Chen Zheng 2014-08-05
8212259 III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substrates Jeffrey S. Flynn, George R. Brandes, Robert P. Vaudo, Xueping Xu, Barbara E. Landini 2012-07-03
6447604 METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((AL,IN,GA)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES Jeffrey S. Flynn, George R. Brandes, Robert P. Vaudo, Xueping Xu, Barbara E. Landini 2002-09-10