| 9190592 |
Thin film thermoelectric devices having favorable crystal tilt |
Philip A. Deane, Thomas Peter Schneider, Christopher D. Holzworth, Joseph R. Williamson |
2015-11-17 |
|
| 8728236 |
Low dislocation density III-V nitride substrate including filled pits and process for making the same |
Xueping Xu |
2014-05-20 |
$15,269,000 |
| 8698286 |
High voltage switching devices and process for forming same |
Jeffrey S. Flynn, George R. Brandes |
2014-04-15 |
$13,870,000 |
| 8390101 |
High voltage switching devices and process for forming same |
Jeffrey S. Flynn, George R. Brandes |
2013-03-05 |
$15,286,000 |
| 8378463 |
Orientation of electronic devices on mis-cut substrates |
George R. Brandes, Xueping Xu |
2013-02-19 |
$9,957,000 |
| 8212259 |
III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substrates |
Jeffrey S. Flynn, George R. Brandes, David Keogh, Xueping Xu, Barbara E. Landini |
2012-07-03 |
$4,921,000 |
| 8174089 |
High voltage switching devices and process for forming same |
Jeffrey S. Flynn, George R. Brandes |
2012-05-08 |
$14,865,000 |
| 8043731 |
Vicinal gallium nitride substrate for high quality homoepitaxy |
Xueping Xu, Jeffrey S. Flynn, George R. Brandes |
2011-10-25 |
$6,006,000 |
| 7972711 |
Large area, uniformly low dislocation density GaN substrate and process for making the same |
Xueping Xu |
2011-07-05 |
$34,968,000 |
| 7915152 |
III-V nitride substrate boule and method of making and using the same |
Jeffrey S. Flynn, George R. Brandes, Joan M. Redwing, Michael A. Tischler |
2011-03-29 |
$9,949,000 |
| 7884447 |
Laser diode orientation on mis-cut substrates |
George R. Brandes, Xueping Xu |
2011-02-08 |
$27,524,000 |
| 7879147 |
Large area, uniformly low dislocation density GaN substrate and process for making the same |
Xueping Xu |
2011-02-01 |
$17,861,000 |
| 7804019 |
Methods of depositing epitaxial thermoelectric films having reduced crack and/or surface defect densities and related devices |
Jonathan M. Pierce |
2010-09-28 |
|
| 7794542 |
Bulk single crystal gallium nitride and method of making same |
Michael A. Tischler, Thomas F. Kuech |
2010-09-14 |
$11,097,000 |
| 7795707 |
High voltage switching devices and process for forming same |
Jeffrey S. Flynn, George R. Brandes |
2010-09-14 |
$11,097,000 |
| 7700203 |
Vicinal gallium nitride substrate for high quality homoepitaxy |
Xueping Xu, Jeffrey S. Flynn, George R. Brandes |
2010-04-20 |
$77,701,000 |
| 7655197 |
III-V nitride substrate boule and method of making and using the same |
Jeffrey S. Flynn, George R. Brandes, Joan M. Redwing, Michael A. Tischler |
2010-02-02 |
$28,436,000 |
| 7390581 |
Vicinal gallium nitride substrate for high quality homoepitaxy |
Xueping Xu, Jeffrey S. Flynn, George R. Brandes |
2008-06-24 |
$9,573,000 |
| 7332031 |
Bulk single crystal gallium nitride and method of making same |
Michael A. Tischler, Thomas F. Kuech |
2008-02-19 |
$12,240,000 |
| 7323256 |
Large area, uniformly low dislocation density GaN substrate and process for making the same |
Xueping Xu |
2008-01-29 |
$7,912,000 |
| 7170095 |
Semi-insulating GaN and method of making the same |
Xueping Xu, George R. Brandes |
2007-01-30 |
$3,542,000 |
| 7118813 |
Vicinal gallium nitride substrate for high quality homoepitaxy |
Xueping Xu, Jeffrey S. Flynn, George R. Brandes |
2006-10-10 |
$3,968,000 |
| 6972051 |
Bulk single crystal gallium nitride and method of making same |
Michael A. Tischler, Thomas F. Kuech |
2005-12-06 |
$7,880,000 |
| 6958093 |
Free-standing (Al, Ga, In)N and parting method for forming same |
George R. Brandes, Michael A. Tischler, Michael Kelly |
2005-10-25 |
$11,228,000 |
| 6951695 |
High surface quality GaN wafer and method of fabricating same |
Xueping Xu |
2005-10-04 |
$11,295,000 |
