Issued Patents All Time
Showing 25 most recent of 33 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9190592 | Thin film thermoelectric devices having favorable crystal tilt | Philip A. Deane, Thomas Peter Schneider, Christopher D. Holzworth, Joseph R. Williamson | 2015-11-17 |
| 8728236 | Low dislocation density III-V nitride substrate including filled pits and process for making the same | Xueping Xu | 2014-05-20 |
| 8698286 | High voltage switching devices and process for forming same | Jeffrey S. Flynn, George R. Brandes | 2014-04-15 |
| 8390101 | High voltage switching devices and process for forming same | Jeffrey S. Flynn, George R. Brandes | 2013-03-05 |
| 8378463 | Orientation of electronic devices on mis-cut substrates | George R. Brandes, Xueping Xu | 2013-02-19 |
| 8212259 | III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substrates | Jeffrey S. Flynn, George R. Brandes, David Keogh, Xueping Xu, Barbara E. Landini | 2012-07-03 |
| 8174089 | High voltage switching devices and process for forming same | Jeffrey S. Flynn, George R. Brandes | 2012-05-08 |
| 8043731 | Vicinal gallium nitride substrate for high quality homoepitaxy | Xueping Xu, Jeffrey S. Flynn, George R. Brandes | 2011-10-25 |
| 7972711 | Large area, uniformly low dislocation density GaN substrate and process for making the same | Xueping Xu | 2011-07-05 |
| 7915152 | III-V nitride substrate boule and method of making and using the same | Jeffrey S. Flynn, George R. Brandes, Joan M. Redwing, Michael A. Tischler | 2011-03-29 |
| 7884447 | Laser diode orientation on mis-cut substrates | George R. Brandes, Xueping Xu | 2011-02-08 |
| 7879147 | Large area, uniformly low dislocation density GaN substrate and process for making the same | Xueping Xu | 2011-02-01 |
| 7804019 | Methods of depositing epitaxial thermoelectric films having reduced crack and/or surface defect densities and related devices | Jonathan M. Pierce | 2010-09-28 |
| 7794542 | Bulk single crystal gallium nitride and method of making same | Michael A. Tischler, Thomas F. Kuech | 2010-09-14 |
| 7795707 | High voltage switching devices and process for forming same | Jeffrey S. Flynn, George R. Brandes | 2010-09-14 |
| 7700203 | Vicinal gallium nitride substrate for high quality homoepitaxy | Xueping Xu, Jeffrey S. Flynn, George R. Brandes | 2010-04-20 |
| 7655197 | III-V nitride substrate boule and method of making and using the same | Jeffrey S. Flynn, George R. Brandes, Joan M. Redwing, Michael A. Tischler | 2010-02-02 |
| 7390581 | Vicinal gallium nitride substrate for high quality homoepitaxy | Xueping Xu, Jeffrey S. Flynn, George R. Brandes | 2008-06-24 |
| 7332031 | Bulk single crystal gallium nitride and method of making same | Michael A. Tischler, Thomas F. Kuech | 2008-02-19 |
| 7323256 | Large area, uniformly low dislocation density GaN substrate and process for making the same | Xueping Xu | 2008-01-29 |
| 7170095 | Semi-insulating GaN and method of making the same | Xueping Xu, George R. Brandes | 2007-01-30 |
| 7118813 | Vicinal gallium nitride substrate for high quality homoepitaxy | Xueping Xu, Jeffrey S. Flynn, George R. Brandes | 2006-10-10 |
| 6972051 | Bulk single crystal gallium nitride and method of making same | Michael A. Tischler, Thomas F. Kuech | 2005-12-06 |
| 6958093 | Free-standing (Al, Ga, In)N and parting method for forming same | George R. Brandes, Michael A. Tischler, Michael Kelly | 2005-10-25 |
| 6951695 | High surface quality GaN wafer and method of fabricating same | Xueping Xu | 2005-10-04 |