Issued Patents All Time
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8698286 | High voltage switching devices and process for forming same | George R. Brandes, Robert P. Vaudo | 2014-04-15 |
| 8390101 | High voltage switching devices and process for forming same | George R. Brandes, Robert P. Vaudo | 2013-03-05 |
| 8212259 | III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substrates | George R. Brandes, Robert P. Vaudo, David Keogh, Xueping Xu, Barbara E. Landini | 2012-07-03 |
| 8174089 | High voltage switching devices and process for forming same | George R. Brandes, Robert P. Vaudo | 2012-05-08 |
| 8043731 | Vicinal gallium nitride substrate for high quality homoepitaxy | Xueping Xu, Robert P. Vaudo, George R. Brandes | 2011-10-25 |
| 7919791 | Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same | George R. Brandes | 2011-04-05 |
| 7915152 | III-V nitride substrate boule and method of making and using the same | Robert P. Vaudo, George R. Brandes, Joan M. Redwing, Michael A. Tischler | 2011-03-29 |
| 7795707 | High voltage switching devices and process for forming same | George R. Brandes, Robert P. Vaudo | 2010-09-14 |
| 7700203 | Vicinal gallium nitride substrate for high quality homoepitaxy | Xueping Xu, Robert P. Vaudo, George R. Brandes | 2010-04-20 |
| 7655197 | III-V nitride substrate boule and method of making and using the same | Robert P. Vaudo, George R. Brandes, Joan M. Redwing, Michael A. Tischler | 2010-02-02 |
| 7390581 | Vicinal gallium nitride substrate for high quality homoepitaxy | Xueping Xu, Robert P. Vaudo, George R. Brandes | 2008-06-24 |
| 7282744 | III-nitride optoelectronic device structure with high Al AlGaN diffusion barrier | Huoping Xin, George R. Brandes | 2007-10-16 |
| 7118813 | Vicinal gallium nitride substrate for high quality homoepitaxy | Xueping Xu, Robert P. Vaudo, George R. Brandes | 2006-10-10 |
| 6596079 | III-V nitride substrate boule and method of making and using the same | Robert P. Vaudo, George R. Brandes, Joan M. Redwing, Michael A. Tischler | 2003-07-22 |
| 6533874 | GaN-based devices using thick (Ga, Al, In)N base layers | Robert P. Vaudo, Joan M. Redwing, Michael A. Tischler, Duncan W. Brown | 2003-03-18 |
| 6447604 | METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((AL,IN,GA)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES | George R. Brandes, Robert P. Vaudo, David Keogh, Xueping Xu, Barbara E. Landini | 2002-09-10 |