Issued Patents All Time
Showing 26–43 of 43 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7390581 | Vicinal gallium nitride substrate for high quality homoepitaxy | Robert P. Vaudo, Jeffrey S. Flynn, George R. Brandes | 2008-06-24 |
| 7323256 | Large area, uniformly low dislocation density GaN substrate and process for making the same | Robert P. Vaudo | 2008-01-29 |
| 7170095 | Semi-insulating GaN and method of making the same | Robert P. Vaudo, George R. Brandes | 2007-01-30 |
| 7118813 | Vicinal gallium nitride substrate for high quality homoepitaxy | Robert P. Vaudo, Jeffrey S. Flynn, George R. Brandes | 2006-10-10 |
| 7097707 | GaN boule grown from liquid melt using GaN seed wafers | — | 2006-08-29 |
| 7090554 | Fabrication of flat-panel display having spacer with rough face for inhibiting secondary electron escape | Roger W. Barton, Kollengode S. Narayanan, Bob Lee Mackey, John M. Macaulay, George B. Hopple +4 more | 2006-08-15 |
| 6951695 | High surface quality GaN wafer and method of fabricating same | Robert P. Vaudo | 2005-10-04 |
| 6680489 | Amorphous silicon carbide thin film coating | George R. Brandes, Chris S. Christos | 2004-01-20 |
| 6617772 | Flat-panel display having spacer with rough face for inhibiting secondary electron escape | Roger W. Barton, Kollengode S. Narayanan, Bob Lee Mackey, John M. Macaulay, George B. Hopple +4 more | 2003-09-09 |
| 6488767 | High surface quality GaN wafer and method of fabricating same | Robert P. Vaudo | 2002-12-03 |
| 6447604 | METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((AL,IN,GA)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES | Jeffrey S. Flynn, George R. Brandes, Robert P. Vaudo, David Keogh, Barbara E. Landini | 2002-09-10 |
| 6445006 | Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same | George R. Brandes | 2002-09-03 |
| 6379210 | Fabrication of electron emitters coated with material such as carbon | George R. Brandes, Christopher J. Spindt, Colin D. Stanners, John M. Macaulay | 2002-04-30 |
| 6356014 | Electron emitters coated with carbon containing layer | George R. Brandes, Christopher J. Spindt, Colin D. Stanners, John M. Macaulay | 2002-03-12 |
| 6268229 | Integrated circuit devices and methods employing amorphous silicon carbide resistor materials | George R. Brandes, Charles Pershing Beetz, Swayambu Ramani, Ronald S. Besser | 2001-07-31 |
| 6031250 | Integrated circuit devices and methods employing amorphous silicon carbide resistor materials | George R. Brandes, Charles Pershing Beetz, Swayambu Ramani, Ronald S. Besser | 2000-02-29 |
| 5973444 | Carbon fiber-based field emission devices | Charles Pershing Beetz, George R. Brandes, Robert W. Boerstler, John Steinbeck | 1999-10-26 |
| 5872422 | Carbon fiber-based field emission devices | Charles Pershing Beetz, George R. Brandes, Robert W. Boerstler, John Steinbeck | 1999-02-16 |