Issued Patents All Time
Showing 1–8 of 8 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12060650 | Vanadium-compensated 4H and 6H single crystals of optical grade, and silicon carbide crystals and methods for producing same | Ilya Zwieback, Varatharajan Rengarajan, Gary E. Ruland | 2024-08-13 |
| 12006591 | Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second material | Ilya Zwieback, Varatharajan Rengarajan, Gary E. Ruland | 2024-06-11 |
| RE48378 | Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof | Ilya Zwieback, Ping Wu, Varatharajan Rengarajan, Avinash Gupta, Thomas E. Anderson +2 more | 2021-01-05 |
| RE46315 | Large diameter, high quality SiC single crystals, method and apparatus | Ilya Zwieback, Thomas E. Anderson, Gary E. Ruland, Avinash Gupta, Varatharajan Rengarajan +2 more | 2017-02-21 |
| 9090989 | Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof | Ilya Zwieback, Ping Wu, Varatharajan Rengarajan, Avinash Gupta, Thomas E. Anderson +2 more | 2015-07-28 |
| 8741413 | Large diameter, high quality SiC single crystals, method and apparatus | Ilya Zwieback, Thomas E. Anderson, Gary E. Ruland, Avinash Gupta, Varatharajan Rengarajan +2 more | 2014-06-03 |
| 8216369 | System for forming SiC crystals having spatially uniform doping impurities | Avinash Gupta, Edward Semenas, Ilya Zwieback, Donovan L. Barrett | 2012-07-10 |
| 7608524 | Method of and system for forming SiC crystals having spatially uniform doping impurities | Avinash Gupta, Edward Semenas, Ilya Zwieback, Donovan L. Barrett | 2009-10-27 |