Issued Patents All Time
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12060650 | Vanadium-compensated 4H and 6H single crystals of optical grade, and silicon carbide crystals and methods for producing same | Ilya Zwieback, Andrew E. Souzis, Gary E. Ruland | 2024-08-13 |
| 12006591 | Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second material | Ilya Zwieback, Andrew E. Souzis, Gary E. Ruland | 2024-06-11 |
| 11905618 | Large diameter silicon carbide single crystals and apparatus and method of manufacture thereof | Xueping Xu, Ilya Zwieback, Avinash Gupta | 2024-02-20 |
| 11035054 | Large diameter silicon carbide single crystals and apparatus and method of manufacture thereof | Xueping Xu, Ilya Zwieback, Avinash Gupta | 2021-06-15 |
| RE48378 | Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof | Ilya Zwieback, Ping Wu, Avinash Gupta, Thomas E. Anderson, Gary E. Ruland +2 more | 2021-01-05 |
| 10793972 | High quality silicon carbide crystals and method of making the same | Xueping Xu, Avinash Gupta, Mark Spiridonovich Ramm, Ilya Zwieback, Gary E. Ruland | 2020-10-06 |
| 9580837 | Method for silicon carbide crystal growth by reacting elemental silicon vapor with a porous carbon solid source material | Ilya Zwieback, Bryan K. Brouhard, Michael C. Nolan, Thomas E. Anderson | 2017-02-28 |
| RE46315 | Large diameter, high quality SiC single crystals, method and apparatus | Ilya Zwieback, Thomas E. Anderson, Andrew E. Souzis, Gary E. Ruland, Avinash Gupta +2 more | 2017-02-21 |
| 9228274 | Axial gradient transport growth process and apparatus utilizing resistive heating | Bryan K. Brouhard, Michael C. Nolan, Ilya Zwieback | 2016-01-05 |
| 9090989 | Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof | Ilya Zwieback, Ping Wu, Avinash Gupta, Thomas E. Anderson, Gary E. Ruland +2 more | 2015-07-28 |
| 8741413 | Large diameter, high quality SiC single crystals, method and apparatus | Ilya Zwieback, Thomas E. Anderson, Andrew E. Souzis, Gary E. Ruland, Avinash Gupta +2 more | 2014-06-03 |