Issued Patents All Time
Showing 1–25 of 29 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12060650 | Vanadium-compensated 4H and 6H single crystals of optical grade, and silicon carbide crystals and methods for producing same | Varatharajan Rengarajan, Andrew E. Souzis, Gary E. Ruland | 2024-08-13 |
| 12006591 | Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second material | Varatharajan Rengarajan, Andrew E. Souzis, Gary E. Ruland | 2024-06-11 |
| 11905618 | Large diameter silicon carbide single crystals and apparatus and method of manufacture thereof | Xueping Xu, Avinash Gupta, Varatharajan Rengarajan | 2024-02-20 |
| 11761117 | SiC single crystal sublimation growth apparatus | Avinash Gupta, Edward Semenas, Marcus Getkin, Patrick Flynn | 2023-09-19 |
| 11149359 | SiC single crystal sublimation growth apparatus | Avinash Gupta, Edward Semenas, Marcus Getkin, Patrick Flynn | 2021-10-19 |
| 11035054 | Large diameter silicon carbide single crystals and apparatus and method of manufacture thereof | Xueping Xu, Avinash Gupta, Varatharajan Rengarajan | 2021-06-15 |
| RE48378 | Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof | Ping Wu, Varatharajan Rengarajan, Avinash Gupta, Thomas E. Anderson, Gary E. Ruland +2 more | 2021-01-05 |
| 10793972 | High quality silicon carbide crystals and method of making the same | Xueping Xu, Avinash Gupta, Mark Spiridonovich Ramm, Varatharajan Rengarajan, Gary E. Ruland | 2020-10-06 |
| 10294584 | SiC single crystal sublimation growth method and apparatus | Avinash Gupta, Edward Semenas, Marcus Getkin, Patrick Flynn | 2019-05-21 |
| 9580837 | Method for silicon carbide crystal growth by reacting elemental silicon vapor with a porous carbon solid source material | Varatharajan Rengarajan, Bryan K. Brouhard, Michael C. Nolan, Thomas E. Anderson | 2017-02-28 |
| RE46315 | Large diameter, high quality SiC single crystals, method and apparatus | Thomas E. Anderson, Andrew E. Souzis, Gary E. Ruland, Avinash Gupta, Varatharajan Rengarajan +2 more | 2017-02-21 |
| 9388509 | Method for synthesizing ultrahigh-purity silicon carbide | Avinash Gupta, Ping Wu, Donovan L. Barrett, Gary E. Ruland, Thomas E. Anderson | 2016-07-12 |
| 9322110 | Vanadium doped SiC single crystals and method thereof | Thomas E. Anderson, Avinash Gupta, Michael C. Nolan, Bryan K. Brouhard, Gary E. Ruland | 2016-04-26 |
| 9228274 | Axial gradient transport growth process and apparatus utilizing resistive heating | Varatharajan Rengarajan, Bryan K. Brouhard, Michael C. Nolan | 2016-01-05 |
| 9090989 | Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof | Ping Wu, Varatharajan Rengarajan, Avinash Gupta, Thomas E. Anderson, Gary E. Ruland +2 more | 2015-07-28 |
| 9017629 | Intra-cavity gettering of nitrogen in SiC crystal growth | Donovan L. Barrett, Avinash Gupta | 2015-04-28 |
| 8858709 | Silicon carbide with low nitrogen content and method for preparation | Avinash Gupta | 2014-10-14 |
| 8741413 | Large diameter, high quality SiC single crystals, method and apparatus | Thomas E. Anderson, Andrew E. Souzis, Gary E. Ruland, Avinash Gupta, Varatharajan Rengarajan +2 more | 2014-06-03 |
| 8512471 | Halosilane assisted PVT growth of SiC | Thomas E. Anderson, Avinash Gupta | 2013-08-20 |
| 8449671 | Fabrication of SiC substrates with low warp and bow | Ping Wu, Avinesh K. Gupta, Edward Semenas | 2013-05-28 |
| 8361227 | Silicon carbide single crystals with low boron content | Thomas E. Anderson, Avinash Gupta | 2013-01-29 |
| 8313720 | Guided diameter SiC sublimation growth with multi-layer growth guide | Avinash Gupta, Edward Semenas, Thomas E. Anderson | 2012-11-20 |
| 8216369 | System for forming SiC crystals having spatially uniform doping impurities | Avinash Gupta, Edward Semenas, Donovan L. Barrett, Andrew E. Souzis | 2012-07-10 |
| 7767022 | Method of annealing a sublimation grown crystal | Avinash Gupta, Jihong Chen, Marcus Getkin, Walter R. M. Stepko, Edward Semenas | 2010-08-03 |
| 7608524 | Method of and system for forming SiC crystals having spatially uniform doping impurities | Avinash Gupta, Edward Semenas, Donovan L. Barrett, Andrew E. Souzis | 2009-10-27 |