Issued Patents All Time
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12065755 | Method for growing a GaN single crystal film on a buffer layer on a ScAlMgO4 substrate and performing cooling so that the GaN film is peeled from the ScAlMgO4 substrate | Haitao Zhang, Bin Xu, Bo Pang | 2024-08-20 |
| 9263266 | Group III nitride articles and methods for making same | Andrew D. Hanser, Edward A. Preble, Denis Tsvetkov, N. Mark Williams, Xueping Xu | 2016-02-16 |
| 9082890 | Group III nitride articles having nucleation layers, transitional layers, and bulk layers | Andrew D. Hanser, Edward A. Preble, Denis Tsvetkov, N. Mark Williams, Xueping Xu | 2015-07-14 |
| 8871556 | Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement | Edward A. Preble, Andrew D. Hanser, N. Mark Williams, Xueping Xu | 2014-10-28 |
| 8637848 | Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement | Edward A. Preble, Andrew D. Hanser, N. Mark Williams, Xueping Xu | 2014-01-28 |
| 8435879 | Method for making group III nitride articles | Andrew D. Hanser, Edward A. Preble, Denis Tsvetkov, Nathaniel Mark Williams, Xueping Xu | 2013-05-07 |
| 8349711 | Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement | Edward A. Preble, Andrew D. Hanser, N. Mark Williams, Xueping Xu | 2013-01-08 |
| 7897490 | Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement | Edward A. Preble, Andrew D. Hanser, N. Mark Williams, Xueping Xu | 2011-03-01 |
| 7727874 | Non-polar and semi-polar GaN substrates, devices, and methods for making them | Andrew D. Hanser, Edward A. Preble, Terry Lee Clites, Keith R. Evans | 2010-06-01 |