DT

Denis Tsvetkov

TI Technologies And Devices International: 7 patents #6 of 22Top 30%
KT Kyma Technologies: 5 patents #6 of 12Top 50%
📍 Morrisville, NC: #132 of 952 inventorsTop 15%
🗺 North Carolina: #3,858 of 45,564 inventorsTop 9%
Overall (All Time): #382,437 of 4,157,543Top 10%
13
Patents All Time

Issued Patents All Time

Showing 1–13 of 13 patents

Patent #TitleCo-InventorsDate
9263266 Group III nitride articles and methods for making same Andrew D. Hanser, Lianghong Liu, Edward A. Preble, N. Mark Williams, Xueping Xu 2016-02-16
9082890 Group III nitride articles having nucleation layers, transitional layers, and bulk layers Andrew D. Hanser, Lianghong Liu, Edward A. Preble, N. Mark Williams, Xueping Xu 2015-07-14
8435879 Method for making group III nitride articles Andrew D. Hanser, Lianghong Liu, Edward A. Preble, Nathaniel Mark Williams, Xueping Xu 2013-05-07
8202793 Inclusion-free uniform semi-insulating group III nitride substrates and methods for making same Edward A. Preble, Andrew D. Hanser, N. Mark Williams, Xueping Xu 2012-06-19
7777217 Inclusion-free uniform semi-insulating group III nitride substrate and methods for making same Edward A. Preble, Andrew D. Hanser, N. Mark Williams, Xueping Xu 2010-08-17
7670435 Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE Andrey E. Nikolaev, Vladimir A. Dmitriev 2010-03-02
6955719 Manufacturing methods for semiconductor devices with multiple III-V material layers Vladimir A. Dmitriev, Aleksei Pechnikov, Yuri V. Melnik, Aleksandr Usikov, Oleg Kovalenkov 2005-10-18
6890809 Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device Sergey Karpov, Alexander Usikov, Heikki I. Helava, Vladimir A. Dmitriev 2005-05-10
6706119 Apparatus for epitaxially growing semiconductor device structures with submicron group III nitride layer utilizing HVPE Andrey E. Nikolaev, Vladimir A. Dmitriev 2004-03-16
6660083 Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPE Andrey E. Nikolaev, Vladimir A. Dmitriev 2003-12-09
6656272 Method of epitaxially growing submicron group III nitride layers utilizing HVPE Andrey E. Nikolaev, Vladimir A. Dmitriev 2003-12-02
6579359 Method of crystal growth and resulted structures Marina Mynbaeva, Vladimir A. Dmitriev, Alexander Lebedev, Nataliya Savkina, Alexander Syrkin +2 more 2003-06-17
6573164 Method of epitaxially growing device structures with sharp layer interfaces utilizing HVPE Andrey E. Nikolaev, Vladimir A. Dmitriev 2003-06-03