Issued Patents All Time
Showing 1–23 of 23 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8372199 | Bulk GaN and AlGaN single crystals | Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev | 2013-02-12 |
| 8092596 | Bulk GaN and AlGaN single crystals | Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev | 2012-01-10 |
| 8092597 | Method and apparatus for fabricating crack-free Group III nitride semiconductor materials | Vladimir A. Dmitriev | 2012-01-10 |
| 7611586 | Reactor for extended duration growth of gallium containing single crystals | Vitali Soukhoveev, Vladimir Ivantsov, Kaite Tsvetkov, Vladimir A. Dmitriev | 2009-11-03 |
| 7556688 | Method for achieving low defect density AlGaN single crystal boules | Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev | 2009-07-07 |
| 7501023 | Method and apparatus for fabricating crack-free Group III nitride semiconductor materials | Vladimir A. Dmitriev | 2009-03-10 |
| 7279047 | Reactor for extended duration growth of gallium containing single crystals | Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev | 2007-10-09 |
| 7157058 | High power ultrasonic reactor for sonochemical applications | Evgeny Marhasin, Marina Grintzova, Vicktor Pekker | 2007-01-02 |
| 6955719 | Manufacturing methods for semiconductor devices with multiple III-V material layers | Vladimir A. Dmitriev, Denis Tsvetkov, Aleksei Pechnikov, Aleksandr Usikov, Oleg Kovalenkov | 2005-10-18 |
| 6936357 | Bulk GaN and ALGaN single crystals | Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev | 2005-08-30 |
| 6849862 | III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer | Audrey E. Nikolaev, Konstantin V. Vassilevski, Vladimir A. Dmitriev | 2005-02-01 |
| 6656285 | Reactor for extended duration growth of gallium containing single crystals | Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev | 2003-12-02 |
| 6616757 | Method for achieving low defect density GaN single crystal boules | Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev | 2003-09-09 |
| 6613143 | Method for fabricating bulk GaN single crystals | Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev | 2003-09-02 |
| 6599133 | Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques | Audrey E. Nikolaev, Konstantin V. Vassilevski, Vladimir A. Dmitriev | 2003-07-29 |
| 6576054 | Method for fabricating bulk AlGaN single crystals | Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev | 2003-06-10 |
| 6559038 | Method for growing p-n heterojunction-based structures utilizing HVPE techniques | Audrey E. Nikolaev, Konstantin V. Vassilevski, Vladimir A. Dmitriev | 2003-05-06 |
| 6559467 | P-n heterojunction-based structures utilizing HVPE grown III-V compound layers | Audrey E. Nikolaev, Konstantin V. Vassilevski, Vladimir A. Dmitriev | 2003-05-06 |
| 6555452 | Method for growing p-type III-V compound material utilizing HVPE techniques | Audrey E. Nikolaev, Konstantin V. Vassilevski, Vladimir A. Dmitriev | 2003-04-29 |
| 6479839 | III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer | Audrey E. Nikolaev, Konstantin V. Vassilevski, Vladimir A. Dmitriev | 2002-11-12 |
| 6476420 | P-N homojunction-based structures utilizing HVPE growth III-V compound layers | Audrey E. Nikolaev, Konstantin V. Vassilevski, Vladimir A. Dmitriev | 2002-11-05 |
| 6472300 | Method for growing p-n homojunction-based structures utilizing HVPE techniques | Audrey E. Nikolaev, Konstantin V. Vassilevski, Vladimir A. Dmitriev | 2002-10-29 |
| 6218269 | Process for producing III-V nitride pn junctions and p-i-n junctions | Andrey E. Nikolaev, Konstantin V. Vassilevski, Vladimir A. Dmitriev | 2001-04-17 |