Issued Patents All Time
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9443727 | Semi-polar III-nitride films and materials and method for making the same | Vladimir Ivantsov, Benjamin A. Haskell, Hussein S. El-Ghoroury, Alexander Syrkin | 2016-09-13 |
| 9416464 | Apparatus and methods for controlling gas flows in a HVPE reactor | Vladimir A. Dmitriev, Oleg Kovalenkov, Vladimir Ivantsov, Lisa Shapovalov, Alexander Syrkin +3 more | 2016-08-16 |
| 9023673 | Free HCL used during pretreatment and AlGaN growth to control growth layer orientation and inclusions | Lisa Shapovalov, Oleg Kovalenkov, Vladimir Ivantsov, Alexander Syrkin, Alexander Usikov | 2015-05-05 |
| 8992684 | Epitaxy reactor internal component geometries for the growth of superior quality group III-nitride materials | Oleg Kovalenkov, Alexander Syrkin, Vladimir Sizov | 2015-03-31 |
| 8647435 | HVPE apparatus and methods for growth of p-type single crystal group III nitride materials | Vladimir A. Dmitriev, Oleg Kovalenkov, Vladimir Ivantsov, Lisa Shapovalov, Alexander Syrkin +3 more | 2014-02-11 |
| 8629065 | Growth of planar non-polar {10-10} M-plane gallium nitride with hydride vapor phase epitaxy (HVPE) | Philippe Spiberg, Hussein S. El-Ghoroury, Alexander Usikov, Alexander Syrkin, Bernard Scanlan | 2014-01-14 |
| 8372199 | Bulk GaN and AlGaN single crystals | Yuri V. Melnik, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev | 2013-02-12 |
| 8092596 | Bulk GaN and AlGaN single crystals | Yuri V. Melnik, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev | 2012-01-10 |
| 7611586 | Reactor for extended duration growth of gallium containing single crystals | Yuri V. Melnik, Vladimir Ivantsov, Kaite Tsvetkov, Vladimir A. Dmitriev | 2009-11-03 |
| 7556688 | Method for achieving low defect density AlGaN single crystal boules | Yuri V. Melnik, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev | 2009-07-07 |
| 7279047 | Reactor for extended duration growth of gallium containing single crystals | Yuri V. Melnik, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev | 2007-10-09 |
| 6936357 | Bulk GaN and ALGaN single crystals | Yuri V. Melnik, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev | 2005-08-30 |
| 6656285 | Reactor for extended duration growth of gallium containing single crystals | Yuri V. Melnik, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev | 2003-12-02 |
| 6616757 | Method for achieving low defect density GaN single crystal boules | Yuri V. Melnik, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev | 2003-09-09 |
| 6613143 | Method for fabricating bulk GaN single crystals | Yuri V. Melnik, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev | 2003-09-02 |
| 6576054 | Method for fabricating bulk AlGaN single crystals | Yuri V. Melnik, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev | 2003-06-10 |