VD

Vladimir A. Dmitriev

TI Technologies And Devices International: 25 patents #1 of 22Top 5%
CR Cree Research: 4 patents #6 of 30Top 20%
FG Freiberger Compound Materials Gmbh: 4 patents #12 of 57Top 25%
OT Ostendo Technologies: 3 patents #27 of 51Top 55%
📍 Gaithersburg, MD: #25 of 1,746 inventorsTop 2%
🗺 Maryland: #405 of 35,612 inventorsTop 2%
Overall (All Time): #85,863 of 4,157,543Top 3%
38
Patents All Time

Issued Patents All Time

Showing 1–25 of 38 patents

Patent #TitleCo-InventorsDate
11661673 HVPE apparatus and methods for growing indium nitride and indium nitride materials and structures grown thereby Alexander Syrkin, Vladimir Ivantsov, Alexander Usikov 2023-05-30
9416464 Apparatus and methods for controlling gas flows in a HVPE reactor Oleg Kovalenkov, Vladimir Ivantsov, Lisa Shapovalov, Alexander Syrkin, Anna Volkova +3 more 2016-08-16
8647435 HVPE apparatus and methods for growth of p-type single crystal group III nitride materials Oleg Kovalenkov, Vladimir Ivantsov, Lisa Shapovalov, Alexander Syrkin, Anna Volkova +3 more 2014-02-11
8372199 Bulk GaN and AlGaN single crystals Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov 2013-02-12
8092596 Bulk GaN and AlGaN single crystals Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov 2012-01-10
8092597 Method and apparatus for fabricating crack-free Group III nitride semiconductor materials Yuri V. Melnik 2012-01-10
7727333 HVPE apparatus and methods for growth of indium containing materials and materials and structures grown thereby Alexander Syrkin, Vladimir Ivantsov, Alexander Usikov, Oleg Kovalenkov 2010-06-01
7670435 Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE Denis Tsvetkov, Andrey E. Nikolaev 2010-03-02
7611586 Reactor for extended duration growth of gallium containing single crystals Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Kaite Tsvetkov 2009-11-03
7556688 Method for achieving low defect density AlGaN single crystal boules Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov 2009-07-07
7501023 Method and apparatus for fabricating crack-free Group III nitride semiconductor materials Yuri V. Melnik 2009-03-10
7279047 Reactor for extended duration growth of gallium containing single crystals Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov 2007-10-09
6955719 Manufacturing methods for semiconductor devices with multiple III-V material layers Denis Tsvetkov, Aleksei Pechnikov, Yuri V. Melnik, Aleksandr Usikov, Oleg Kovalenkov 2005-10-18
6936357 Bulk GaN and ALGaN single crystals Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov 2005-08-30
6890809 Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device Sergey Karpov, Alexander Usikov, Heikki I. Helava, Denis Tsvetkov 2005-05-10
6849862 III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer Audrey E. Nikolaev, Yuri V. Melnik, Konstantin V. Vassilevski 2005-02-01
6706119 Apparatus for epitaxially growing semiconductor device structures with submicron group III nitride layer utilizing HVPE Denis Tsvetkov, Andrey E. Nikolaev 2004-03-16
6660083 Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPE Denis Tsvetkov, Andrey E. Nikolaev 2003-12-09
6656272 Method of epitaxially growing submicron group III nitride layers utilizing HVPE Denis Tsvetkov, Andrey E. Nikolaev 2003-12-02
6656285 Reactor for extended duration growth of gallium containing single crystals Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov 2003-12-02
6616757 Method for achieving low defect density GaN single crystal boules Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov 2003-09-09
6613143 Method for fabricating bulk GaN single crystals Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov 2003-09-02
6599133 Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques Audrey E. Nikolaev, Yuri V. Melnik, Konstantin V. Vassilevski 2003-07-29
6579359 Method of crystal growth and resulted structures Marina Mynbaeva, Denis Tsvetkov, Alexander Lebedev, Nataliya Savkina, Alexander Syrkin +2 more 2003-06-17
6576054 Method for fabricating bulk AlGaN single crystals Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov 2003-06-10