Issued Patents All Time
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7141498 | Method of forming an ohmic contact in wide band semiconductor | Rajesh Kumar Malhan, Yuichi Takeuchi, Irina Nikitina, Nicholas Wright, Alton Horsfall | 2006-11-28 |
| 6849862 | III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer | Audrey E. Nikolaev, Yuri V. Melnik, Vladimir A. Dmitriev | 2005-02-01 |
| 6599133 | Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques | Audrey E. Nikolaev, Yuri V. Melnik, Vladimir A. Dmitriev | 2003-07-29 |
| 6559467 | P-n heterojunction-based structures utilizing HVPE grown III-V compound layers | Audrey E. Nikolaev, Yuri V. Melnik, Vladimir A. Dmitriev | 2003-05-06 |
| 6559038 | Method for growing p-n heterojunction-based structures utilizing HVPE techniques | Audrey E. Nikolaev, Yuri V. Melnik, Vladimir A. Dmitriev | 2003-05-06 |
| 6555452 | Method for growing p-type III-V compound material utilizing HVPE techniques | Audrey E. Nikolaev, Yuri V. Melnik, Vladimir A. Dmitriev | 2003-04-29 |
| 6479839 | III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer | Audrey E. Nikolaev, Yuri V. Melnik, Vladimir A. Dmitriev | 2002-11-12 |
| 6476420 | P-N homojunction-based structures utilizing HVPE growth III-V compound layers | Audrey E. Nikolaev, Yuri V. Melnik, Vladimir A. Dmitriev | 2002-11-05 |
| 6472300 | Method for growing p-n homojunction-based structures utilizing HVPE techniques | Audrey E. Nikolaev, Yuri V. Melnik, Vladimir A. Dmitriev | 2002-10-29 |
| 6218269 | Process for producing III-V nitride pn junctions and p-i-n junctions | Andrey E. Nikolaev, Yuri V. Melnik, Vladimir A. Dmitriev | 2001-04-17 |