VD

Vladimir A. Dmitriev

TI Technologies And Devices International: 25 patents #1 of 22Top 5%
CR Cree Research: 4 patents #6 of 30Top 20%
FG Freiberger Compound Materials Gmbh: 4 patents #12 of 57Top 25%
OT Ostendo Technologies: 3 patents #27 of 51Top 55%
📍 Gaithersburg, MD: #25 of 1,746 inventorsTop 2%
🗺 Maryland: #405 of 35,612 inventorsTop 2%
Overall (All Time): #85,863 of 4,157,543Top 3%
38
Patents All Time

Issued Patents All Time

Showing 26–38 of 38 patents

Patent #TitleCo-InventorsDate
6573164 Method of epitaxially growing device structures with sharp layer interfaces utilizing HVPE Denis Tsvetkov, Andrey E. Nikolaev 2003-06-03
6562124 Method of manufacturing GaN ingots Vladimir Ivantzov, Vitaliy Sukhoveev 2003-05-13
6559467 P-n heterojunction-based structures utilizing HVPE grown III-V compound layers Audrey E. Nikolaev, Yuri V. Melnik, Konstantin V. Vassilevski 2003-05-06
6559038 Method for growing p-n heterojunction-based structures utilizing HVPE techniques Audrey E. Nikolaev, Yuri V. Melnik, Konstantin V. Vassilevski 2003-05-06
6555452 Method for growing p-type III-V compound material utilizing HVPE techniques Audrey E. Nikolaev, Yuri V. Melnik, Konstantin V. Vassilevski 2003-04-29
6479839 III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer Audrey E. Nikolaev, Yuri V. Melnik, Konstantin V. Vassilevski 2002-11-12
6476420 P-N homojunction-based structures utilizing HVPE growth III-V compound layers Audrey E. Nikolaev, Yuri V. Melnik, Konstantin V. Vassilevski 2002-11-05
6472300 Method for growing p-n homojunction-based structures utilizing HVPE techniques Audrey E. Nikolaev, Yuri V. Melnik, Konstantin V. Vassilevski 2002-10-29
6218269 Process for producing III-V nitride pn junctions and p-i-n junctions Andrey E. Nikolaev, Yuri V. Melnik, Konstantin V. Vassilevski 2001-04-17
5679153 Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures Svetlana V. Rendakova, Vladimir Ivantsov, Calvin H. Carter, Jr. 1997-10-21
5523589 Vertical geometry light emitting diode with group III nitride active layer and extended lifetime John Edmond, Gary E. Bulman, Hua-Shuang Kong 1996-06-04
5393993 Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices John Edmond, Kenneth George Irvine 1995-02-28
5338944 Blue light-emitting diode with degenerate junction structure John Edmond, Hua-Shuang Kong, Gary E. Bulman 1994-08-16