Issued Patents All Time
Showing 1–25 of 43 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12283482 | Thin wafer process for improved crystal utilization of wide bandgap devices | Sudarsan Uppili | 2025-04-22 |
| 12206028 | Single sided channel mesa power junction field effect transistor | — | 2025-01-21 |
| RE49913 | Vertical power transistor device | Anant Agarwal, Lin Cheng, Daniel Jenner Lichtenwalner, John Williams Palmour | 2024-04-09 |
| 11869982 | Single sided channel mesa power junction field effect transistor | Sudarsan Uppili | 2024-01-09 |
| 11791378 | Superjunction power semiconductor devices formed via ion implantation channeling techniques and related methods | Edward Robert Van Brunt, Alexander V. Suvorov, Daniel Jenner Lichtenwalner, Qingchun Zhang | 2023-10-17 |
| 11705485 | LDMOS transistors with breakdown voltage clamps | Vijay Parthasarathy, Marco A. Zuniga | 2023-07-18 |
| 11682722 | Vertical transistor structure with buried channel and resurf regions and method of manufacturing the same | Sudarsan Uppili | 2023-06-20 |
| 11605713 | Silicon carbide planar MOSFET with wave-shaped channel regions | Rahul R. Potera, Tony Witt | 2023-03-14 |
| 11557588 | Multi-transistor device including first and second LDMOS transistors having respective drift regions separated in a thickness direction by a shared RESURF layer | Vijay Parthasarathy, Badredin Fatemizadeh, Marco A. Zuniga, John Xia | 2023-01-17 |
| 11552078 | Silicon carbide MOSFET with source ballasting | — | 2023-01-10 |
| 11545585 | Single sided channel mesa power junction field effect transistor | Sudarsan Uppili | 2023-01-03 |
| 11521965 | Junction field effect transistor with integrated high voltage capacitor | — | 2022-12-06 |
| 11245016 | Silicon carbide trench semiconductor device | David Sheridan, Madhur Bobde | 2022-02-08 |
| 11211484 | Vertical transistor structure with buried channel and resurf regions and method of manufacturing the same | Sundarsan UPPILI | 2021-12-28 |
| 11195909 | LDMOS transistors with breakdown voltage clamps | Vijay Parthasarathy, Marco A. Zuniga | 2021-12-07 |
| 11088688 | Configurations of composite devices comprising of a normally-on FET and a normally-off FET | — | 2021-08-10 |
| 11075264 | Super junction power semiconductor devices formed via ion implantation channeling techniques and related methods | Edward Robert Van Brunt, Alexander V. Suvorov, Daniel Jenner Lichtenwalner, Qingchun Zhang | 2021-07-27 |
| 11069804 | Integration of HVLDMOS with shared isolation region | — | 2021-07-20 |
| 10964694 | Multi-transistor device including first and second LDMOS transistors having respective drift regions separated in a thickness direction by a shared RESURF layer | Vijay Parthasarathy, Badredin Fatemizadeh, Marco A. Zuniga, John Xia | 2021-03-30 |
| 10950695 | Silicon carbide planar MOSFET with wave-shaped channel regions | Rahul R. Potera, Tony Witt | 2021-03-16 |
| 10950719 | Seminconductor device with spreading layer | Lin Cheng, Anant Agarwal, John Williams Palmour, Edward Robert Van Brunt | 2021-03-16 |
| RE48380 | Vertical power transistor device | Anant Agarwal, Lin Cheng, Daniel Jenner Lichtenwalner, John Williams Palmour | 2021-01-05 |
| 10868169 | Monolithically integrated vertical power transistor and bypass diode | Lin Cheng, Anant Agarwal, John Williams Palmour, Edward Robert Van Brunt | 2020-12-15 |
| 10818662 | Silicon carbide MOSFET with source ballasting | — | 2020-10-27 |
| 10784338 | Field effect transistor devices with buried well protection regions | Lin Cheng, Anant Agarwal, John Williams Palmour | 2020-09-22 |