Issued Patents All Time
Showing 126–150 of 181 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7259033 | Flip-chip bonding of light emitting devices | David B. Slater, Jr., Jayesh Bharathan, Mark Raffetto, Anwar Mohammed, Peter Scott Andrews +1 more | 2007-08-21 |
| 7259402 | High efficiency group III nitride-silicon carbide light emitting diode | Jayesh Bharathan, David B. Slater, Jr. | 2007-08-21 |
| 7211833 | Light emitting diodes including barrier layers/sublayers | David B. Slater, Jr., Bradley E. Williams, Peter Scott Andrews, Scott Allen | 2007-05-01 |
| 7170097 | Inverted light emitting diode on conductive substrate | Kathleen Marie Doverspike, Michael John Bergmann, Hua-Shuang Kong | 2007-01-30 |
| 7138291 | Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices | Davis Andrew McClure, Alexander Suvorov, David B. Slater, Jr. | 2006-11-21 |
| 7125737 | Robust Group III light emitting diode for high reliability in standard packaging applications | Brian Thibeault, David B. Slater, Jr., Gerald H. Negley, Van Mieczkowski | 2006-10-24 |
| 7071490 | Group III nitride LED with silicon carbide substrate | Kathleen Marie Doverspike, Hua-Shuang Kong, Michael John Bergmann | 2006-07-04 |
| 7034328 | Vertical geometry InGaN LED | Kathleen Marie Doverspike, Hua-Shuang Kong, Heidi Marie Dieringer, David B. Slater, Jr. | 2006-04-25 |
| 6995398 | Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices | Davis Andrew McClure, Alexander Suvorov, David B. Slater, Jr. | 2006-02-07 |
| 6987281 | Group III nitride contact structures for light emitting devices | Kathleen Marie Doverspike, Michael John Bergmann, Hua-Shuang Kong | 2006-01-17 |
| 6955977 | Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures | Hua-Shuang Kong, Kevin Haberern, David T. Emerson | 2005-10-18 |
| 6952024 | Group III nitride LED with silicon carbide cladding layer | Kathleen Marie Doverspike, Hua-Shuang Kong, Michael John Bergmann | 2005-10-04 |
| 6946682 | Robust group III light emitting diode for high reliability in standard packaging applications | David B. Slater, Jr., Gerald H. Negley | 2005-09-20 |
| 6906352 | Group III nitride LED with undoped cladding layer and multiple quantum well | Kathleen Marie Doverspike, Hua-Shuang Kong, Michael John Bergmann, David T. Emerson | 2005-06-14 |
| 6888167 | Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding | David B. Slater, Jr., Jayesh Bharathan, Mark Raffetto, Anwar Mohammed, Peter Scott Andrews +1 more | 2005-05-03 |
| 6825501 | Robust Group III light emitting diode for high reliability in standard packaging applications | Brian Thibeault, David B. Slater, Jr., Gerald H. Negley, Van Mieczkowski | 2004-11-30 |
| 6812053 | Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures | Hua-Shuang Kong, Kevin Haberern, David T. Emerson | 2004-11-02 |
| 6803602 | Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures | Hua-Shuang Kong, Kevin Haberern, David T. Emerson | 2004-10-12 |
| 6800876 | Group III nitride LED with undoped cladding layer (5000.137) | Kathleen Marie Doverspike, Hua-Shuang Kong, Michael John Bergmann | 2004-10-05 |
| 6784461 | Group III nitride light emitting devices with progressively graded layers | Kathleen Marie Doverspike, Hua-Shuang Kong, Michael John Bergmann | 2004-08-31 |
| 6764932 | Single step pendeo- and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures | Hua-Shuang Kong, Kevin Haberern, David T. Emerson | 2004-07-20 |
| 6747298 | Collets for bonding of light emitting diodes having shaped substrates | David B. Slater, Jr., Jayesh Bharathan, Mark Raffetto, Anwar Mohammed, Peter Scott Andrews +1 more | 2004-06-08 |
| 6717185 | Light emitting devices with Group III nitride contact layer and superlattice | Kathleen Marie Doverspike, Hua-Shuang Kong, Michael John Bergmann | 2004-04-06 |
| 6630690 | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure | Hua-Shuang Kong, Kathleen Marie Doverspike, Michelle Turner Leonard | 2003-10-07 |
| 6610551 | Vertical geometry InGaN LED | Kathleen Marie Doverspike, Hua-Shuang Kong, Heidi Marie Dieringer, David B. Slater, Jr. | 2003-08-26 |