Issued Patents All Time
Showing 76–100 of 181 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| D689209 | Lamp packages | Matthew Donofrio, Hua-Shuang Kong, Peter Scott Andrews, David T. Emerson | 2013-09-03 |
| D689210 | Lamp packages | Matthew Donofrio, Hua-Shuang Kong, Peter Scott Andrews, David T. Emerson | 2013-09-03 |
| 8513686 | High output small area group III nitride LEDs | — | 2013-08-20 |
| 8436368 | Methods of forming light emitting devices having current reducing structures | David T. Emerson, Kevin Haberern, Michael John Bergmann, David B. Slater, Jr., Matthew Donofrio | 2013-05-07 |
| D675580 | Light emitting diode | Matthew Donofrio | 2013-02-05 |
| 8362681 | Semiconductor light emitting apparatus including elongated hollow wavelength conversion tubes | Christopher P. Hussell | 2013-01-29 |
| 8357923 | External extraction light emitting diode based upon crystallographic faceted surfaces | David B. Slater, Jr., Hua-Shuang Kong, Matthew Donofrio | 2013-01-22 |
| D673125 | Light emitting diode | Matthew Donofrio | 2012-12-25 |
| 8269241 | Light emitting diodes including barrier layers/sublayers and manufacturing methods therefor | David B. Slater, Jr., Bradley E. Williams, Peter Scott Andrews, Scott Allen | 2012-09-18 |
| 8247836 | Nickel tin bonding system with barrier layer for semiconductor wafers and devices | Matthew Donofrio, David B. Slater, Jr., Hua-Shuang Kong | 2012-08-21 |
| 8183588 | High efficiency group III nitride LED with lenticular surface | David B. Slater, Jr., Jayesh Bharathan, Matthew Donofrio | 2012-05-22 |
| 8174037 | High efficiency group III nitride LED with lenticular surface | David B. Slater, Jr., Jayesh Bharathan, Matthew Donofrio | 2012-05-08 |
| 8163577 | Methods of forming light emitting devices having current reducing structures | David T. Emerson, Kevin Haberern, Michael John Bergmann, David B. Slater, Jr., Matthew Donofrio | 2012-04-24 |
| 8154039 | High efficiency group III nitride LED with lenticular surface | David B. Slater, Jr., Jayesh Bharathan, Matthew Donofrio | 2012-04-10 |
| 8101961 | Transparent ohmic contacts on light emitting diodes with growth substrates | David B. Slater, Jr., Michael John Bergmann | 2012-01-24 |
| 8076670 | LED with conductively joined bonding structure | David B. Slater, Jr. | 2011-12-13 |
| 8017963 | Light emitting diode with a dielectric mirror having a lateral configuration | Matthew Donofrio, James Ibbetson, Ting Li | 2011-09-13 |
| 8004172 | Semiconductor light emitting apparatus including elongated hollow wavelength conversion tubes and methods of assembling same | Christopher P. Hussell | 2011-08-23 |
| 7964888 | Semiconductor light emitting device packages and methods | Ban P. Loh, Nathaniel O. Cannon, Norbert Hiller, Mitch Jackson, Nicholas W. Medendorp, Jr. | 2011-06-21 |
| 7943406 | LED fabrication via ion implant isolation | David B. Slater, Jr., Alexander Suvorov, Iain Hamilton | 2011-05-17 |
| 7932111 | Substrate removal process for high light extraction LEDs | — | 2011-04-26 |
| D635525 | LED chip | Michael John Bergmann, Matthew Donofrio, Winston T. Parker | 2011-04-05 |
| 7910945 | Nickel tin bonding system with barrier layer for semiconductor wafers and devices | Matthew Donofrio, David B. Slater, Jr., Hua-Shuang Kong | 2011-03-22 |
| RE42007 | Vertical geometry InGaN LED | Kathleen Marie Doverspike, Hua-Shuang Kong, Heidi Marie Dieringer, David B. Slater, Jr. | 2010-12-28 |
| 7855459 | Modified gold-tin system with increased melting temperature for wafer bonding | David B. Slater, Jr., Hua-Shuang Kong | 2010-12-21 |