Issued Patents All Time
Showing 151–175 of 181 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6582986 | Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures | Hua-Shuang Kong, Kevin Haberern, David T. Emerson | 2003-06-24 |
| 6534797 | Group III nitride light emitting devices with gallium-free layers | Kathleen Marie Doverspike, Hua-Shuang Kong, Michael John Bergmann | 2003-03-18 |
| 6492193 | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure | Hua-Shuang Kong, Kathleen Marie Doverspike, Michelle Turner Leonard | 2002-12-10 |
| 6459100 | Vertical geometry ingan LED | Kathleen Marie Doverspike, Hua-Shuang Kong, Heidi Marie Dieringer, David B. Slater, Jr. | 2002-10-01 |
| 6373077 | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure | Hua-Shuang Kong, Kathleen Marie Doverspike, Michelle Turner Leonard | 2002-04-16 |
| 6201262 | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure | Hua-Shuang Kong, Kathleen Marie Doverspike, Michelle Turner Leonard | 2001-03-13 |
| 6187606 | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure | Hua-Shuang Kong, Kathleen Marie Doverspike, Michelle Turner Leonard | 2001-02-13 |
| 6120600 | Double heterojunction light emitting diode with gallium nitride active layer | Hua-Shuang Kong | 2000-09-19 |
| 5963791 | Silicon carbide MOSFET having self-aligned gate structure and method of fabrication | Dale M. Brown, Richard Joseph Saia, John Williams Palmour | 1999-10-05 |
| 5838706 | Low-strain laser structures with group III nitride active layers | Gary E. Bulman, Hua-Shuang Kong | 1998-11-17 |
| 5739554 | Double heterojunction light emitting diode with gallium nitride active layer | Hua-Shuang Kong | 1998-04-14 |
| 5726463 | Silicon carbide MOSFET having self-aligned gate structure | Dale M. Brown, Richard Joseph Saia, John Williams Palmour | 1998-03-10 |
| 5604135 | Method of forming green light emitting diode in silicon carbide | Alexander V. Suvorov | 1997-02-18 |
| 5592501 | Low-strain laser structures with group III nitride active layers | Gary E. Bulman, Hua-Shuang Kong | 1997-01-07 |
| 5539217 | Silicon carbide thyristor | John Williams Palmour | 1996-07-23 |
| 5523589 | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime | Gary E. Bulman, Hua-Shuang Kong, Vladimir A. Dmitriev | 1996-06-04 |
| 5416342 | Blue light-emitting diode with high external quantum efficiency | Hua-Shuang Kong | 1995-05-16 |
| 5394005 | Silicon carbide photodiode with improved short wavelength response and very low leakage current | Dale M. Brown | 1995-02-28 |
| 5393993 | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices | Vladimir A. Dmitriev, Kenneth George Irvine | 1995-02-28 |
| 5381103 | System and method for accelerated degradation testing of semiconductor devices | Douglas A. Asbury, Calvin H. Carter, Jr., Douglas G. Waltz | 1995-01-10 |
| 5338944 | Blue light-emitting diode with degenerate junction structure | Hua-Shuang Kong, Vladimir A. Dmitriev, Gary E. Bulman | 1994-08-16 |
| 5093576 | High sensitivity ultraviolet radiation detector | Calvin H. Carter, Jr. | 1992-03-03 |
| 5087576 | Implantation and electrical activation of dopants into monocrystalline silicon carbide | Robert F. Davis | 1992-02-11 |
| 5061972 | Fast recovery high temperature rectifying diode formed in silicon carbide | — | 1991-10-29 |
| 5027168 | Blue light emitting diode formed in silicon carbide | — | 1991-06-25 |