DE

David Eaglesham

Applied Materials: 10 patents #1,290 of 7,310Top 20%
PT Pellion Technologies: 7 patents #2 of 22Top 10%
FS First Solar: 6 patents #46 of 324Top 15%
VP Viking Power Systems Pte: 6 patents #2 of 9Top 25%
AT AT&T: 4 patents #4,399 of 18,772Top 25%
EH Electric Hydrogen: 2 patents #1 of 16Top 7%
📍 Lexington, MA: #117 of 2,299 inventorsTop 6%
🗺 Massachusetts: #2,253 of 88,656 inventorsTop 3%
Overall (All Time): #91,680 of 4,157,543Top 3%
36
Patents All Time

Issued Patents All Time

Showing 26–36 of 36 patents

Patent #TitleCo-InventorsDate
7704352 High-aspect ratio anode and apparatus for high-speed electroplating on a solar cell substrate Sergey Lopatin, Nicolay Kovarsky, John O. Dukovic, Charles Gay 2010-04-27
7674662 Process for making thin film field effect transistors using zinc oxide Yan Ye, John M. White 2010-03-09
7659203 Electroless deposition process on a silicon contact Michael P. Stewart, Timothy Weidman, Arulkumar Shanmugasundram 2010-02-09
7585769 Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE David P. Bour, Jacob Smith, Sandeep Nijhawan, Lori D. Washington 2009-09-08
7575982 Stacked-substrate processes for production of nitride semiconductor structures David P. Bour, Sandeep Nijhawan, Lori D. Washington, Jacob Smith 2009-08-18
7547570 Method for forming thin film photovoltaic interconnects using self-aligned process Peter G. Borden 2009-06-16
7470599 Dual-side epitaxy processes for production of nitride semiconductor structures Sandeep Nijhawan, Lori D. Washington, David P. Bour, Jacob Smith 2008-12-30
6136672 Process for device fabrication using a high-energy boron implant Konstantin Bourdelle 2000-10-24
6043139 Process for controlling dopant diffusion in a semiconductor layer Hans-Joachim L. Gossmann, John M. Poate, Peter Stolk 2000-03-28
5731626 Process for controlling dopant diffusion in a semiconductor layer and semiconductor layer formed thereby Hans-Joachim L. Gossmann, John M. Poate, Peter Stolk 1998-03-24
5169798 Forming a semiconductor layer using molecular beam epitaxy Hans-Joachim L. Gossmann 1992-12-08