Issued Patents 2024
Showing 51–75 of 81 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11955526 | Thick gate oxide device option for nanosheet device | Kangguo Cheng, Julien Frougier, Chanro Park, Veeraraghavan S. Basker | 2024-04-09 |
| 11948944 | Optimized contact resistance for stacked FET devices | Heng Wu, Jingyun Zhang, Julien Frougier | 2024-04-02 |
| 11942424 | Via patterning for integrated circuits | Tao Li, Tsung-Sheng Kang, Chih-Chao Yang | 2024-03-26 |
| 11942374 | Nanosheet field effect transistor with a source drain epitaxy replacement | Julien Frougier, Chanro Park, Kangguo Cheng | 2024-03-26 |
| 11935930 | Wrap-around-contact for 2D-channel gate-all-around field-effect-transistors | Julien Frougier, Kangguo Cheng, Chanro Park, Andrew Gaul | 2024-03-19 |
| 11937521 | Structure and method to fabricate resistive memory with vertical pre-determined filament | Chanro Park, Kangguo Cheng, Choonghyun Lee | 2024-03-19 |
| 11935931 | Selective shrink for contact trench | Jing Guo, Ekmini Anuja De Silva, Abraham Arceo de la Pena | 2024-03-19 |
| 11935929 | High aspect ratio shared contacts | Julien Frougier, Su Chen Fan, Ravikumar Ramachandran, Nicolas Loubet | 2024-03-19 |
| 11923363 | Semiconductor structure having bottom isolation and enhanced carrier mobility | Julien Frougier, Kangguo Cheng, Chanro Park, Juntao Li | 2024-03-05 |
| 11923434 | Self-aligned bottom spacer epi last flow for VTFET | Tao Li, Sung-Dae Suk, Heng Wu | 2024-03-05 |
| 11923248 | Single diffusion cut for gate structures | Hui Zang | 2024-03-05 |
| 11916073 | Stacked complementary field effect transistors | Kangguo Cheng, Julien Frougier, Chanro Park | 2024-02-27 |
| 11916143 | Vertical transport field-effect transistor with gate patterning | Wenyu Xu, Indira Seshadri, Jing Guo, Ekmini Anuja De Silva | 2024-02-27 |
| 11915966 | Backside power rail integration | Takeshi Nogami, Roy R. Yu, Balasubramanian Pranatharthiharan, Albert M. Young, Kisik Choi +1 more | 2024-02-27 |
| 11908944 | Contact formation for vertical field effect transistors | Heng Wu, Lan Yu, Samuel S. Choi | 2024-02-20 |
| 11908907 | VFET contact formation | Heng Wu, Tian Shen, Kai Zhao | 2024-02-20 |
| 11894433 | Method and structure to improve stacked FET bottom EPI contact | Alexander Reznicek, Chen Zhang, Kangguo Cheng | 2024-02-06 |
| 11895934 | Phase change memory with heater | Kangguo Cheng, Chanro Park, Julien Frougier | 2024-02-06 |
| 11895818 | Stacked FET SRAM | Carl Radens, Junli Wang, Ravikumar Ramachandran, Julien Frougier, Dechao Guo | 2024-02-06 |
| 11894444 | Secure chip identification using random threshold voltage variation in a field effect transistor structure as a physically unclonable function | Clint Jason Oteri, Alexander Reznicek, Bahman Hekmatshoartabari, Jingyun Zhang | 2024-02-06 |
| 11894442 | Full nanosheet airgap spacer | Jingyun Zhang, Reinaldo Vega, Kangguo Cheng, Lan Yu | 2024-02-06 |
| 11894436 | Gate-all-around monolithic stacked field effect transistors having multiple threshold voltages | Julien Frougier, Nicolas Loubet, Andrew M. Greene, Veeraraghavan S. Basker, Balasubramanian Pranatharthiharan | 2024-02-06 |
| 11894361 | Co-integrated logic, electrostatic discharge, and well contact devices on a substrate | Julien Frougier, Sagarika Mukesh, Anthony I. Chou, Andrew M. Greene, Veeraraghavan S. Basker +4 more | 2024-02-06 |
| 11887890 | Partial self-aligned contact for MOL | Veeraraghavan S. Basker, Alexander Reznicek, Junli Wang | 2024-01-30 |
| 11887643 | Integrated magnetic shield for MRAM arrays | Julien Frougier, Dimitri Houssameddine, Kangguo Cheng | 2024-01-30 |