| 12176348 |
Self-aligned hybrid substrate stacked gate-all-around transistors |
Ruqiang Bao, Dechao Guo |
2024-12-24 |
| 12148833 |
Three-dimensional, monolithically stacked field effect transistors formed on the front and backside of a wafer |
Sung-Dae Suk, Somnath Ghosh, Chen Zhang, Devendra K. Sadana, Dechao Guo |
2024-11-19 |
| 12142599 |
Stacked transistor structure with reflection layer |
Teresa J. Wu, Tenko Yamashita, Heng Wu |
2024-11-12 |
| 12142656 |
Staggered stacked semiconductor devices |
Albert M. Chu, Albert M. Young, Vidhi Zalani, Dechao Guo |
2024-11-12 |
| 12113013 |
Dual color via patterning |
Hsueh-Chung Chen, Yann Mignot, Su Chen Fan, Mary Claire Silvestre, Chi-Chun Liu |
2024-10-08 |
| 12107168 |
Independent gate length tunability for stacked transistors |
Ruqiang Bao, Dechao Guo |
2024-10-01 |
| 12062657 |
Long channel and short channel vertical FET co-integration for vertical FET VTFET |
Terence B. Hook, Baozhen Li, Kirk D. Peterson |
2024-08-13 |
| 12046673 |
Vertical transistor and method of forming the vertical transistor |
Fee Li Lie, Shogo Mochizuki |
2024-07-23 |
| 12009395 |
Self-aligned block for vertical FETs |
Ruilong Xie, Choonghyun Lee, Alexander Reznicek |
2024-06-11 |
| 12002874 |
Buried power rail contact |
Ruilong Xie, Brent A. Anderson, Chen Zhang, Heng Wu |
2024-06-04 |
| 12001772 |
Ultra-short-height standard cell architecture |
Albert M. Chu, Brent A. Anderson |
2024-06-04 |
| 11984401 |
Stacked FET integration with BSPDN |
Ruilong Xie, Mukta G. Farooq, Dechao Guo |
2024-05-14 |
| 11901440 |
Sacrificial fin for self-aligned contact rail formation |
Yann Mignot, Christopher J. Waskiewicz, Su Chen Fan, Brent A. Anderson |
2024-02-13 |
| 11895818 |
Stacked FET SRAM |
Ruilong Xie, Carl Radens, Ravikumar Ramachandran, Julien Frougier, Dechao Guo |
2024-02-06 |
| 11894423 |
Contact resistance reduction in nanosheet device structure |
Heng Wu, Dechao Guo, Ruqiang Bao, Lan Yu, Reinaldo Vega +1 more |
2024-02-06 |
| 11894361 |
Co-integrated logic, electrostatic discharge, and well contact devices on a substrate |
Julien Frougier, Sagarika Mukesh, Anthony I. Chou, Andrew M. Greene, Ruilong Xie +4 more |
2024-02-06 |
| 11887890 |
Partial self-aligned contact for MOL |
Ruilong Xie, Veeraraghavan S. Basker, Alexander Reznicek |
2024-01-30 |
| 11875987 |
Contacts having a geometry to reduce resistance |
Lawrence A. Clevenger, Baozhen Li, Kirk D. Peterson, Terry A. Spooner |
2024-01-16 |
| 11862710 |
Vertical transistor including symmetrical source/drain extension junctions |
Chun-Chen Yeh, Alexander Reznicek, Veeraraghavan S. Basker |
2024-01-02 |
