Issued Patents 2024
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12176404 | Wrap-around contact for nanosheet device | Ruilong Xie, Oleg Gluschenkov, Pietro Montanini | 2024-12-24 |
| 12136656 | Semiconductor structure having two-dimensional channel | Andrew Gaul, Julien Frougier, Ruilong Xie, Christopher J. Waskiewicz, Kangguo Cheng | 2024-11-05 |
| 12100746 | Gate-all-around field effect transistor with bottom dielectric isolation | Julien Frougier, Nicolas Loubet, Ruilong Xie, Maruf Amin Bhuiyan, Veeraraghavan S. Basker | 2024-09-24 |
| 12100744 | Wrap around contact process margin improvement with early contact cut | Ruilong Xie, Veeraraghavan S. Basker, Alexander Reznicek, Yao Yao | 2024-09-24 |
| 12074165 | Gate cut with integrated etch stop layer | Marc A. Bergendahl, Rajasekhar Venigalla | 2024-08-27 |
| 11990508 | Dual step etch-back inner spacer formation | Yao Yao, Ruilong Xie, Veeraraghavan S. Basker | 2024-05-21 |
| 11990342 | Metal cut patterning and etching to minimize interlayer dielectric layer loss | Kisup Chung, Ekmini Anuja De Silva, Siva Kanakasabapathy, Indira Seshadri | 2024-05-21 |
| 11942557 | Nanosheet transistor with enhanced bottom isolation | Lan Yu, Wenyu Xu, Heng Wu | 2024-03-26 |
| 11908743 | Planar devices with consistent base dielectric | Huimei Zhou, Julien Frougier, Ruqiang Bao, Jingyun Zhang, Miaomiao Wang +1 more | 2024-02-20 |
| 11894436 | Gate-all-around monolithic stacked field effect transistors having multiple threshold voltages | Julien Frougier, Ruilong Xie, Nicolas Loubet, Veeraraghavan S. Basker, Balasubramanian Pranatharthiharan | 2024-02-06 |
| 11894361 | Co-integrated logic, electrostatic discharge, and well contact devices on a substrate | Julien Frougier, Sagarika Mukesh, Anthony I. Chou, Ruilong Xie, Veeraraghavan S. Basker +4 more | 2024-02-06 |
| 11876136 | Transistor having wrap-around source/drain contacts and under-contact spacers | Yi Song, Praveen Joseph, Kangguo Cheng | 2024-01-16 |