Issued Patents 2024
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12166042 | Stacked nanosheet gate-all-around device structures | Huiming Bu, Balasubramanian Pranatharthiharan | 2024-12-10 |
| 12154971 | Forming nanosheet transistor using sacrificial spacer and inner spacers | Kangguo Cheng, Julien Frougier | 2024-11-26 |
| 12154945 | Backside CMOS trench epi with close N2P space | Tao Li, Ruilong Xie, Julien Frougier | 2024-11-26 |
| 12100746 | Gate-all-around field effect transistor with bottom dielectric isolation | Julien Frougier, Andrew M. Greene, Ruilong Xie, Maruf Amin Bhuiyan, Veeraraghavan S. Basker | 2024-09-24 |
| 12087691 | Semiconductor structures with backside gate contacts | Ruilong Xie, Julien Frougier, Veeraraghavan S. Basker, Lawrence A. Clevenger, Dechao Guo +3 more | 2024-09-10 |
| 12080709 | Dual inner spacer epitaxy in monolithic stacked FETs | Sagarika Mukesh, Julien Frougier, Ruilong Xie | 2024-09-03 |
| 12040373 | Liner-free resistance contacts and silicide with silicide stop layer | Christian Lavoie, Adra Carr, Nicholas Anthony Lanzillo | 2024-07-16 |
| 11984493 | Formation of nanosheet transistor channels using epitaxial growth | Shogo Mochizuki, Kirsten Emilie Moselund, Cezar Bogdan Zota | 2024-05-14 |
| 11948943 | Method to induce strain in FINFET channels from an adjacent region | Pierre Morin | 2024-04-02 |
| 11935929 | High aspect ratio shared contacts | Ruilong Xie, Julien Frougier, Su Chen Fan, Ravikumar Ramachandran | 2024-03-19 |
| 11894361 | Co-integrated logic, electrostatic discharge, and well contact devices on a substrate | Julien Frougier, Sagarika Mukesh, Anthony I. Chou, Andrew M. Greene, Ruilong Xie +4 more | 2024-02-06 |
| 11894436 | Gate-all-around monolithic stacked field effect transistors having multiple threshold voltages | Julien Frougier, Ruilong Xie, Andrew M. Greene, Veeraraghavan S. Basker, Balasubramanian Pranatharthiharan | 2024-02-06 |