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Random weight initialization of non-volatile memory array |
Cheng Chi, Takashi Ando, Praneet Adusumilli |
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| 12080714 |
Buried local interconnect between complementary field-effect transistor cells |
Ruilong Xie, Alexander Reznicek, Kangguo Cheng |
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Self aligned replacement metal source/drain FINFET |
Emre Alptekin, Robert R. Robison |
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Decoupling capacitor inside gate cut trench |
David Wolpert, Takashi Ando, Praneet Adusumilli, Cheng Chi |
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| 12015069 |
Gate-all-around field effect transistor having multiple threshold voltages |
Ruqiang Bao, Michael A. Guillorn, Terence B. Hook, Robert R. Robison, Tenko Yamashita |
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| 11990470 |
Ferroelectric and paraelectric stack capacitors |
Takashi Ando, Cheng Chi, Praneet Adusumilli |
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| 11973141 |
Nanosheet transistor with ferroelectric region |
Jingyun Zhang, Miaomiao Wang, Takashi Ando |
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| 11916099 |
Multilayer dielectric for metal-insulator-metal capacitor |
Takashi Ando, David Wolpert, Cheng Chi, Praneet Adusumilli |
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| 11916014 |
Gate contact inside gate cut trench |
Takashi Ando, Cheng Chi, Praneet Adusumilli |
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| 11894423 |
Contact resistance reduction in nanosheet device structure |
Heng Wu, Dechao Guo, Ruqiang Bao, Junli Wang, Lan Yu +1 more |
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| 11894442 |
Full nanosheet airgap spacer |
Jingyun Zhang, Ruilong Xie, Kangguo Cheng, Lan Yu |
2024-02-06 |