Issued Patents 2024
Showing 1–25 of 27 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12156395 | Metal gate patterning for logic and SRAM in nanosheet devices | Choonghyun Lee, Jingyun Zhang, Alexander Reznicek | 2024-11-26 |
| 12150392 | Transfer length phase change material (PCM) based bridge cell | Guy M. Cohen, Nanbo Gong | 2024-11-19 |
| 12136671 | Gate-all-around field-effect transistor having source side lateral end portion smaller than a thickness of channel portion and drain side lateral end portion | Jingyun Zhang, Choonghyun Lee, Pouya Hashemi, Alexander Reznicek | 2024-11-05 |
| 12135497 | Random weight initialization of non-volatile memory array | Cheng Chi, Reinaldo Vega, Praneet Adusumilli | 2024-11-05 |
| 12099616 | Physically unclonable function based on a phase change material array | Guy M. Cohen, Nanbo Gong | 2024-09-24 |
| 12058943 | Phase-change material-based XOR logic gates | Nanbo Gong, Guy M. Cohen | 2024-08-06 |
| 12057387 | Decoupling capacitor inside gate cut trench | Reinaldo Vega, David Wolpert, Praneet Adusumilli, Cheng Chi | 2024-08-06 |
| 12026605 | FeFET unit cells for neuromorphic computing | Nanbo Gong, Bahman Hekmatshoartabari, Alexander Reznicek | 2024-07-02 |
| 12004436 | RRAM with high work function cap | Soon-Cheon Seo, Min Gyu Sung, Chanro Park, Mary Claire Silvestre, Xuefeng Liu | 2024-06-04 |
| 11990470 | Ferroelectric and paraelectric stack capacitors | Reinaldo Vega, Cheng Chi, Praneet Adusumilli | 2024-05-21 |
| 11973141 | Nanosheet transistor with ferroelectric region | Jingyun Zhang, Reinaldo Vega, Miaomiao Wang | 2024-04-30 |
| 11965499 | Motor and air compressor | Hiroyuki Tanaka, Tomohide Tsutsui, Hisami Oguri | 2024-04-23 |
| 11956975 | BEOL fat wire level ground rule compatible embedded artificial intelligence integration | Soon-Cheon Seo, Dexin Kong, Paul C. Jamison, Hiroyuki Miyazoe, Youngseok Kim +3 more | 2024-04-09 |
| D1020742 | Memory card reader for programmable controller | Hiroyuki Kato, Hiroyuki Onojima, Kazuma Takahata, Mitsuhiro Yamada, Atsutomo Hayamizu | 2024-04-02 |
| 11948618 | Non-volatile analog resistive memory cells implementing ferroelectric select transistors | Nanbo Gong | 2024-04-02 |
| 11942388 | Temperature-assisted device with integrated thin-film heater | Bahman Hekmatshoartabari, Nanbo Gong, Alexander Reznicek | 2024-03-26 |
| 11937522 | Confining filament at pillar center for memory devices | Dexin Kong, Kangguo Cheng, Juntao Li | 2024-03-19 |
| 11929404 | Transistor gates having embedded metal-insulator-metal capacitors | Alexander Reznicek, Bahman Hekmatshoartabari, Nanbo Gong | 2024-03-12 |
| 11923458 | FeFET with double gate structure | Guy M. Cohen, Nanbo Gong | 2024-03-05 |
| 11915751 | Nonvolatile phase change material logic device | Guy M. Cohen, Nanbo Gong | 2024-02-27 |
| 11915734 | Spin-orbit-torque magnetoresistive random-access memory with integrated diode | Pouya Hashemi, Alexander Reznicek | 2024-02-27 |
| 11916099 | Multilayer dielectric for metal-insulator-metal capacitor | Reinaldo Vega, David Wolpert, Cheng Chi, Praneet Adusumilli | 2024-02-27 |
| 11916014 | Gate contact inside gate cut trench | Reinaldo Vega, Cheng Chi, Praneet Adusumilli | 2024-02-27 |
| 11915926 | Percolation doping of inorganic-organic frameworks for multiple device applications | Leonidas E. Ocola, Eric A. Joseph, Hiroyuki Miyazoe, Damon B. Farmer | 2024-02-27 |
| 11910734 | Phase change memory cell with ovonic threshold switch | Nanbo Gong, Robert L. Bruce, Alexander Reznicek, Bahman Hekmatshoartabari | 2024-02-20 |