Issued Patents 2023
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11830808 | Semiconductor structure and method making the same | Hsin-Yen Huang, Kai-Fang Cheng, Chi-Lin Teng, Tien-I Bao | 2023-11-28 |
| 11818896 | Cocktail layer over gate dielectric layer of FET FeRAM | Rainer Yen-Chieh Huang, Chung-Te Lin | 2023-11-14 |
| 11817498 | Ferroelectric field effect transistor devices and methods for forming the same | Yen-Chieh Huang, Po-Ting Lin, Song-Fu Liao, Yu-Ming Lin | 2023-11-14 |
| 11810956 | In-situ thermal annealing of electrode to form seed layer for improving FeRAM performance | Yen-Chieh Huang, Po-Ting Lin, Song-Fu Liao, Chung-Te Lin | 2023-11-07 |
| 11810815 | Dielectric capping structure overlying a conductive structure to increase stability | Hsin-Yen Huang, Chi-Lin Teng, Shau-Lin Shue, Shao-Kuan Lee, Cheng-Chin Lee +1 more | 2023-11-07 |
| 11777010 | Semiconductor structure and method for forming the same | Yen-Chieh Huang, Yu-Ming Lin, Chung-Te Lin | 2023-10-03 |
| 11778914 | Organic gate TFT-type stress sensors and method of making and using the same | Rainer Yen-Chieh Huang | 2023-10-03 |
| 11769695 | Semiconductor structure including low-resistance interconnect and integrated circuit device having the same | Hsin-Yen Huang, Shao-Kuan Lee, Cheng-Chin Lee, Hsiang-Wei Liu, Tai-I Yang +2 more | 2023-09-26 |
| 11769815 | Carrier barrier layer for tuning a threshold voltage of a ferroelectric memory device | Rainer Yen-Chieh Huang, Yu-Ming Lin, Chung-Te Lin | 2023-09-26 |
| 11756878 | Self-aligned via structure by selective deposition | Shao-Kuan Lee, Hsin-Yen Huang, Cheng-Chin Lee, Shau-Lin Shue | 2023-09-12 |
| 11729990 | Capping layer over FET FeRAM to increase charge mobility | Rainer Yen-Chieh Huang, Chung-Te Lin | 2023-08-15 |
| 11710700 | Graphene-assisted low-resistance interconnect structures and methods of formation thereof | Shin-Yi Yang, Yu-Chen Chan, Ming-Han Lee, Shau-Lin Shue | 2023-07-25 |
| 11706928 | Memory device and method for fabricating the same | Rainer Yen-Chieh Huang, Chung-Te Lin | 2023-07-18 |
| 11690228 | Annealed seed layer to improve ferroelectric properties of memory layer | Song-Fu Liao, Rainer Yen-Chieh Huang, Chung-Te Lin | 2023-06-27 |
| 11670715 | Semiconductor devices with ferroelectric layer and methods of manufacturing thereof | Yen-Chieh Huang, Po-Ting Lin, Sai-Hooi Yeong, Yu-Ming Lin, Chung-Te Lin | 2023-06-06 |
| 11658120 | Porogen bonded gap filling material in semiconductor manufacturing | Bo-Jiun Lin, Ching-Yu Chang, Tien-I Bao | 2023-05-23 |
| 11652148 | Method of selective film deposition and semiconductor feature made by the method | Song-Fu Liao, Chung-Te Lin | 2023-05-16 |
| 11653501 | Ferroelectric memory device, manufacturing method of the ferroelectric memory device and semiconductor chip | Rainer Yen-Chieh Huang, Yu-Ming Lin, Chung-Te Lin | 2023-05-16 |
| 11640924 | Structure and method for interconnection with self-alignment | Tai-I Yang, Yu-Chieh Liao, Chia-Tien Wu, Hsin-Ping Chen, Shau-Lin Shue | 2023-05-02 |
| 11637010 | System and method of forming a porous low-k structure | Bo-Jiun Lin, Tien-I Bao | 2023-04-25 |
| 11581334 | Cocktail layer over gate dielectric layer of FET FeRAM | Rainer Yen-Chieh Huang, Chung-Te Lin | 2023-02-14 |