Issued Patents 2023
Showing 1–20 of 20 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11848377 | Semiconductor component with edge termination region | Anton Mauder, Matteo Dainese, Elmar Falck, Franz-Josef Niedernostheide, Manfred Pfaffenlehner | 2023-12-19 |
| 11843045 | Power semiconductor device having overvoltage protection and method of manufacturing the same | Markus Beninger-Bina, Thomas Basler, Matteo Dainese | 2023-12-12 |
| 11837528 | Method of manufacturing a semiconductor device having a bond wire or clip bonded to a bonding pad | Anton Mauder | 2023-12-05 |
| 11791383 | Semiconductor device having a ferroelectric gate stack | Saurabh Roy, Thomas Aichinger | 2023-10-17 |
| 11764063 | Silicon carbide device with compensation region and method of manufacturing | Romain Esteve, Moriz Jelinek, Caspar Leendertz, Werner Schustereder | 2023-09-19 |
| 11764296 | Method for manufacturing a semiconductor device | Anton Mauder, Johannes Georg Laven, Werner Schustereder | 2023-09-19 |
| 11742384 | Vertical power semiconductor device including a field stop region having a plurality of impurity peaks | Christian Jaeger, Moriz Jelinek, Daniel Schloegl, Benedikt Stoib | 2023-08-29 |
| 11742391 | Semiconductor component having a diode structure in a SiC semiconductor body | Thomas Basler, Ralf Siemieniec | 2023-08-29 |
| 11742215 | Methods for forming a semiconductor device | Alexander Breymesser, Bernhard Goller, Matthias Kuenle, Helmut Oefner, Francisco Javier Santos Rodriguez +1 more | 2023-08-29 |
| 11735642 | Methods of re-using a silicon carbide substrate | Roland Rupp, Francisco Javier Santos Rodriguez | 2023-08-22 |
| 11728427 | Power semiconductor device having a strain-inducing material embedded in an electrode | Stefan Karner, Oliver Blank, Günter Denifl, Germano Galasso, Saurabh Roy +1 more | 2023-08-15 |
| 11721547 | Method for manufacturing a silicon carbide substrate for an electrical silicon carbide device, a silicon carbide substrate and an electrical silicon carbide device | Christian Hecht, Tobias Franz Wolfgang Hoechbauer, Roland Rupp | 2023-08-08 |
| 11688713 | Additive manufacturing of a frontside or backside interconnect of a semiconductor die | Edward Fuergut, Irmgard Escher-Poeppel, Martin Gruber, Ivan Nikitin | 2023-06-27 |
| RE49546 | Power semiconductor device with charge balance design | Alice Pei-Shan Hsieh | 2023-06-06 |
| 11652022 | Power semiconductor device and method | Josef Schaetz, Dethard Peters, Stephan Pindl | 2023-05-16 |
| 11626477 | Silicon carbide field-effect transistor including shielding areas | Ralf Siemieniec, Thomas Aichinger, Thomas Basler, Wolfgang Bergner, Rudolf Elpelt +5 more | 2023-04-11 |
| 11576259 | Carrier, laminate and method of manufacturing semiconductor devices | Andre Brockmeier, Tobias Franz Wolfgang Hoechbauer, Gerhard Metzger-Brueckl, Matteo Piccin, Francisco Javier Santos Rodriguez | 2023-02-07 |
| 11569392 | Power semiconductor diode including field stop region | Christian Jaeger, Moriz Jelinek, Daniel Schloegl, Benedikt Stoib | 2023-01-31 |
| 11557506 | Methods for processing a semiconductor substrate | Werner Schustereder, Alexander Breymesser, Mihai Draghici, Tobias Franz Wolfgang Hoechbauer, Wolfgang Lehnert +1 more | 2023-01-17 |
| 11552172 | Silicon carbide device with compensation layer and method of manufacturing | Caspar Leendertz, Romain Esteve, Moriz Jelinek, Anton Mauder, Werner Schustereder | 2023-01-10 |