Issued Patents 2022
Showing 1–25 of 30 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11538927 | Nanostructures and method for manufacturing the same | Kuo-Cheng Chiang, Jung-Chien Cheng, Chih-Hao Wang, Kuan-Lun Cheng | 2022-12-27 |
| 11532695 | Stress reduction structure for metal-insulator-metal capacitors | Jin-Mu Yin, Hung-Chao Kao, Hsiang-Ku Shen, Dian-Hau Chen | 2022-12-20 |
| 11508827 | Air spacer for a gate structure of a transistor | Yi-Hsiu Liu, Feng-Cheng Yang, Tsung-Lin Lee, Wei-Yang Lee, Yen-Ting Chen | 2022-11-22 |
| 11508736 | Method for forming different types of devices | Feng-Ching Chu, Wei-Yang Lee, Feng-Cheng Yang | 2022-11-22 |
| 11502005 | Semiconductor devices and methods of forming the same | Feng-Ching Chu, Wei-Yang Lee, Feng-Cheng Yang | 2022-11-15 |
| 11502182 | Selective gate air spacer formation | Chih-Hsin Yang, Feng-Cheng Yang, Tsung-Lin Lee, Wei-Yang Lee, Dian-Hau Chen | 2022-11-15 |
| 11488874 | Semiconductor device with funnel shape spacer and methods of forming the same | Cheng-Yu Yang, Yen-Ting Chen, Wei-Yang Lee, Fu-Kai Yang | 2022-11-01 |
| 11477573 | Handheld electronic device with multiple speakers | Tsung-Yen YU, Kuo-Yuan HUANG, Shih-Jie Kuo, Yuan-Hao Lo, Wei-Chi Pan | 2022-10-18 |
| 11476352 | Conformal transfer doping method for fin-like field effect transistor | Sai-Hooi Yeong, Sheng-Chen Wang, Bo-Yu Lai, Ziwei Fang, Feng-Cheng Yang | 2022-10-18 |
| 11456295 | Air gap formation between gate spacer and epitaxy structure | Bo-Yu Lai, Kai-Hsuan Lee, Wei-Yang Lee, Feng-Cheng Yang | 2022-09-27 |
| 11444173 | Semiconductor device structure with salicide layer and method for forming the same | Hsiang-Ku Shen, Jin-Mu Yin, Tsung-Chieh Hsiao, Chia-Lin Chuang, Li-Zhen Yu +14 more | 2022-09-13 |
| 11437331 | Chip structure and method for forming the same | Chih-Fan Huang, Mao-Nan Wang, Hui-Chi Chen, Dian-Hau Chen | 2022-09-06 |
| 11437372 | Liner structures | Tsung-Chieh Hsiao, Johnson Chen, Tzung-Yi Tsai, Tsung-Lin Lee | 2022-09-06 |
| 11411107 | FinFET structure and method with reduced fin buckling | Wei-Jen Lai, Tsung-Lin Lee | 2022-08-09 |
| 11404324 | Fin isolation structures of semiconductor devices | Kuo-Cheng Chiang, Chih-Hao Wang, Kuan-Lun Cheng | 2022-08-02 |
| 11380639 | Shielding structures | Chih-Fan Huang, Hui-Chi Chen, Kuo-Chin Chang, Chien-Huang Yeh, Hong-Seng Shue +1 more | 2022-07-05 |
| 11362199 | Semiconductor device and method | I-Hsieh Wong, Yen-Ting Chen, Wei-Yang Lee, Feng-Cheng Yang | 2022-06-14 |
| 11362170 | Metal-insulator-metal (MIM) capacitor structure and method for forming the same | Chih-Fan Huang, Chih-Yang Pai, Yuan-Yang Hsiao, Tsung-Chieh Hsiao, Hui-Chi Chen +1 more | 2022-06-14 |
| 11355400 | Using a metal-containing layer as an etching stop layer and to pattern source/drain regions of a FinFET | Yen-Ting Chen, Wei-Yang Lee, Feng-Cheng Yang | 2022-06-07 |
| 11342408 | Metal-insulator-metal structure and methods of fabrication thereof | Chih-Fan Huang, Hung-Chao Kao, Yuan-Yang Hsiao, Tsung-Chieh Hsiao, Hsiang-Ku Shen +2 more | 2022-05-24 |
| 11302535 | Performing annealing process to improve fin quality of a FinFET semiconductor | Tzung-Yi Tsai, Tsung-Lin Lee, Po-Kang Ho | 2022-04-12 |
| 11296077 | Transistors with recessed silicon cap and method forming same | Yen-Ting Chen, Bo-Yu Lai, Chien-Wei Lee, Hsueh-Chang Sung, Wei-Yang Lee +1 more | 2022-04-05 |
| 11289574 | Methods of forming epitaxial source/drain features in semiconductor devices | Tzu-Hsiang Hsu, Ting-Yeh Chen, Wei-Yang Lee, Feng-Cheng Yang | 2022-03-29 |
| 11257928 | Method for epitaxial growth and device | Tzu-Hsiang Hsu, Ting-Yeh Chen, Wei-Yang Lee, Feng-Cheng Yang | 2022-02-22 |
| 11239142 | Package structure and method for forming the same | Chih-Fan Huang, Hsiang-Ku Shen, Hui-Chi Chen, Tien-I Bao, Dian-Hau Chen | 2022-02-01 |