Issued Patents 2022
Showing 1–5 of 5 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11495606 | FinFET having non-merging epitaxially grown source/drains | Chun Po Chang, Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang, Wei-Yang Lee | 2022-11-08 |
| 11482620 | Interfacial layer between Fin and source/drain region | Chih-Yun Chin, Chii-Horng Li, Chien-Wei Lee, Hsueh-Chang Sung, Heng-Wen Ting +5 more | 2022-10-25 |
| 11289574 | Methods of forming epitaxial source/drain features in semiconductor devices | Ting-Yeh Chen, Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen | 2022-03-29 |
| 11264237 | Method of epitaxy and semiconductor device | Chih-Yun Chin, Yen-Ru Lee, Chii-Horng Li | 2022-03-01 |
| 11257928 | Method for epitaxial growth and device | Ting-Yeh Chen, Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen | 2022-02-22 |