Issued Patents 2022
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11482620 | Interfacial layer between Fin and source/drain region | Chih-Yun Chin, Chii-Horng Li, Chien-Wei Lee, Heng-Wen Ting, Roger Tai +5 more | 2022-10-25 |
| 11437515 | Source and drain stressors with recessed top surfaces | Kun-Mu Li, Tsz-Mei Kwok, Chii-Horng Li, Tze-Liang Lee | 2022-09-06 |
| 11411098 | Devices with strained source/drain structures and method of forming the same | Tsz-Mei Kwok, Kuan-Yu Chen, Hsien-Hsin Lin | 2022-08-09 |
| 11411109 | MOS devices having epitaxy regions with reduced facets | Kun-Mu Li, Tze-Liang Lee, Chii-Horng Li, Tsz-Mei Kwok | 2022-08-09 |
| 11355620 | FinFET device and method of forming same | Chien-Wei Lee, Che-Yu Lin, Yee-Chia Yeo | 2022-06-07 |
| 11348840 | Semiconductor device and method | Wei-Min Liu, Yee-Chia Yeo | 2022-05-31 |
| 11296077 | Transistors with recessed silicon cap and method forming same | Yen-Ting Chen, Bo-Yu Lai, Chien-Wei Lee, Wei-Yang Lee, Feng-Cheng Yang +1 more | 2022-04-05 |
| 11271096 | Method for forming fin field effect transistor device structure | Chien-Wei Lee, Yen-Ru Lee, Yee-Chia Yeo | 2022-03-08 |
| 11217672 | Method of forming a source/drain | Chien-Wei Lee, Yen-Ru Lee | 2022-01-04 |