Issued Patents 2022
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11482620 | Interfacial layer between Fin and source/drain region | Chih-Yun Chin, Chien-Wei Lee, Hsueh-Chang Sung, Heng-Wen Ting, Roger Tai +5 more | 2022-10-25 |
| 11476331 | Supportive layer in source/drains of FinFET devices | Jung-Chi Tai, Pei-Ren Jeng, Yen-Ru Lee, Yan-Ting Lin, Chih-Yun Chin | 2022-10-18 |
| 11437497 | Semiconductor device and method | Ji-Yin Tsai, Jung-Jen Chen, Pei-Ren Jeng, Kei-Wei Chen, Yee-Chia Yeo | 2022-09-06 |
| 11437515 | Source and drain stressors with recessed top surfaces | Kun-Mu Li, Tsz-Mei Kwok, Hsueh-Chang Sung, Tze-Liang Lee | 2022-09-06 |
| 11430878 | Method for fabricating semiconductor device | Yen-Ru Lee, Chien-I Kuo, Heng-Wen Ting, Jung-Chi Tai, Lilly Su +1 more | 2022-08-30 |
| 11411109 | MOS devices having epitaxy regions with reduced facets | Hsueh-Chang Sung, Kun-Mu Li, Tze-Liang Lee, Tsz-Mei Kwok | 2022-08-09 |
| 11367660 | Semiconductor method and device | Cheng-Hsiung Yen, Ta-Chun Ma, Chien-Chang Su, Jung-Jen Chen, Pei-Ren Jeng +1 more | 2022-06-21 |
| 11264237 | Method of epitaxy and semiconductor device | Chih-Yun Chin, Tzu-Hsiang Hsu, Yen-Ru Lee | 2022-03-01 |
| 11257951 | Method of making semiconductor device having first and second epitaxial materials | Lilly Su, Ming-Hua Yu, Pang-Yen Tsai, Tze-Liang Lee, Yen-Ru Lee | 2022-02-22 |