Issued Patents 2022
Showing 1–20 of 20 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11532480 | Methods of forming contact features in semiconductor devices | Chen-Hung Tsai, Fu-Kai Yang, Mei-Yun Wang | 2022-12-20 |
| 11532507 | Semiconductor device and method | Chun-Han Chen, I-Wen Wu, Fu-Kai Yang, Mei-Yun Wang, Chung-Ting Ko +2 more | 2022-12-20 |
| 11532504 | Low-resistance contact plugs and method forming same | Shao-Ming Koh, Fu-Kai Yang | 2022-12-20 |
| 11495606 | FinFET having non-merging epitaxially grown source/drains | Chun Po Chang, Fu-Kai Yang, Mei-Yun Wang, Wei-Yang Lee, Tzu-Hsiang Hsu | 2022-11-08 |
| 11495494 | Methods for reducing contact depth variation in semiconductor fabrication | Yun Lee, Fu-Kai Yang, Yi-Jyun Huang, Sheng-Hsiung Wang, Mei-Yun Wang | 2022-11-08 |
| 11489053 | Semiconductor device and method | Chun-Han Chen, Fu-Kai Yang, Mei-Yun Wang | 2022-11-01 |
| 11450572 | Semiconductor device and method | Chun-Han Chen, Fu-Kai Yang, Mei-Yun Wang | 2022-09-20 |
| 11444162 | Backside contact with air spacer | Wei-Yang Lee | 2022-09-13 |
| 11398553 | Source/drain features | Ruei-Ping Lin, Kai-Di Tzeng, Wei-Yang Lee | 2022-07-26 |
| 11387331 | Source/drain contact structure | Ting Fang, Chung-Hao Cai, Jui-Ping Lin, Chia-Hsien Yao, Fu-Kai Yang +1 more | 2022-07-12 |
| 11374104 | Methods of reducing capacitance in field-effect transistors | Chun-Han Chen, Fu-Kai Yang, Mei-Yun Wang | 2022-06-28 |
| 11362003 | Prevention of contact bottom void in semiconductor fabrication | Yun Lee, Chung-Ting Ko, Mei-Yun Wang, Fu-Kai Yang | 2022-06-14 |
| 11349005 | Silicide structures in transistors and methods of forming | Kai-Di Tzeng, Fu-Kai Yang, Mei-Yun Wang | 2022-05-31 |
| 11302802 | Parasitic capacitance reduction | Jia-Heng Wang, Chun-Han Chen, I-Wen Wu, Fu-Kai Yang, Mei-Yun Wang | 2022-04-12 |
| 11289383 | Semiconductor device and method | Chien-Yuan Chen, Jui-Ping Lin, Fu-Kai Yang, Mei-Yun Wang | 2022-03-29 |
| 11264383 | Fin field effect transistor (FinFET) device structure with capping layer and method for forming the same | Chun-Han Chen, Fu-Kai Yang, Mei-Yun Wang, Jr-Hung Li, Bo-Cyuan Lu | 2022-03-01 |
| 11239309 | Isolation features and methods of fabricating the same | I-Wen Wu, Fu-Kai Yang, Mei-Yun Wang, Jr-Hung Li, Bo-Cyuan Lu | 2022-02-01 |
| 11227950 | Methods of forming air spacers in semiconductor devices | Chao-Hsun Wang, Kuo-Yi Chao, Mei-Yun Wang, Pei-Yu Chou, Kuo-Ju Chen | 2022-01-18 |
| 11222951 | Epitaxial source/drain structure and method | I-Wen Wu, Fu-Kai Yang, Mei-Yun Wang, Chun-An Lin, Wei-Yuan Lu +2 more | 2022-01-11 |
| 11217492 | Method for source/drain contact formation in semiconductor devices using common doping and common etching to n-type and p-type source/drains | Shao-Ming Koh, I-Wen Wu, Fu-Kai Yang, Jia-Heng Wang, Mei-Yun Wang | 2022-01-04 |