Issued Patents 2022
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11532733 | Dielectric isolation structure for multi-gate transistors | Jen-Hong Chang, Yi-Hsiu Liu, You-Ting Lin, Chih-Chung Chang, Jiun-Ming Kuo +4 more | 2022-12-20 |
| 11532717 | Forming metal contacts on metal gates | Chao-Hsun Wang, Yu-Feng Yin, Mei-Yun Wang, Feng-Yu Chang, Chen-Yuan Kao | 2022-12-20 |
| 11532561 | Different via configurations for different via interface requirements | Shih-Che Lin, Po-Yu Huang, Chao-Hsun Wang, Mei-Yun Wang, Feng-Yu Chang +3 more | 2022-12-20 |
| 11508822 | Source/drain via having reduced resistance | Po-Yu Huang, Shih-Che Lin, Chao-Hsun Wang, Mei-Yun Wang | 2022-11-22 |
| 11430691 | Polishing interconnect structures in semiconductor devices | Pang-Sheng Chang, Chao-Hsun Wang, Fu-Kai Yang, Mei-Yun Wang, Li-Chieh Wu +1 more | 2022-08-30 |
| 11404576 | Dielectric fin structure | Yu-Shan Lu, Chung-I Yang, Wen-Hsing Hsieh, Jiun-Ming Kuo, Chih-Ching Wang +1 more | 2022-08-02 |
| 11393724 | Semiconductor device and method | Shih-Chieh Wu, Pang-Chi Wu, Mei-Yun Wang, Hsien-Huang Liao, Tung-Heng Hsieh +1 more | 2022-07-19 |
| 11387240 | Compact electrical connection that can be used to form an SRAM cell and method of making the same | Yu-Kuan Lin, Chang-Ta Yang, Ping-Wei Wang, Mei-Yun Wang | 2022-07-12 |
| 11322394 | Contact formation method and related structure | Chao-Hsun Wang, Wang-Jung Hsueh, Mei-Yun Wang | 2022-05-03 |
| 11271112 | Method for forming fin field effect transistor (FINFET) device structure with conductive layer between gate and gate contact | Chao-Hsun Wang, Rueijer Lin, Chen-Yuan Kao, Mei-Yun Wang | 2022-03-08 |
| 11227830 | Conductive features having varying resistance | Jia-En Lee, Po-Yu Huang, Shih-Che Lin, Chao-Hsun Wang, Mei-Yun Wang +1 more | 2022-01-18 |
| 11227950 | Methods of forming air spacers in semiconductor devices | Chao-Hsun Wang, Chen-Ming Lee, Mei-Yun Wang, Pei-Yu Chou, Kuo-Ju Chen | 2022-01-18 |