Issued Patents 2022
Showing 1–2 of 2 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11532718 | FinFET having a gate dielectric comprising a multi-layer structure including an oxide layer with different thicknesses on side and top surfaces of the fins | Chen-Hsuan Liao, Chun-Heng Chen, Jiun-Ming Kuo | 2022-12-20 |
| 11532733 | Dielectric isolation structure for multi-gate transistors | Jen-Hong Chang, Yi-Hsiu Liu, You-Ting Lin, Kuo-Yi Chao, Jiun-Ming Kuo +4 more | 2022-12-20 |