Issued Patents 2022
Showing 1–22 of 22 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11538804 | Stacked integration of III-N transistors and thin-film transistors | Han Wui Then, Marko Radosavljevic, Sansaptak Dasgupta, Walid M. Hafez | 2022-12-27 |
| 11527532 | Enhancement-depletion cascode arrangements for enhancement mode III-N transistors | Nidhi Nidhi, Han Wui Then, Marko Radosavljevic, Sansaptak Dasgupta, Rahul Ramaswamy +2 more | 2022-12-13 |
| 11521964 | Schottky diode structures and integration with III-V transistors | Han Wui Then, Walid M. Hafez, Marko Radosavljevic, Sansaptak Dasgupta | 2022-12-06 |
| 11515407 | High breakdown voltage structure for high performance GaN-based HEMT and MOS devices to enable GaN C-MOS | Glenn A. Glass, Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Anand S. Murthy +1 more | 2022-11-29 |
| 11502124 | Filter-centric III-N films enabling RF filter integration with III-N transistors | Han Wui Then, Zdravko Boos, Marko Radosavljevic, Sansaptak Dasgupta | 2022-11-15 |
| 11489061 | Integrated programmable gate radio frequency (RF) switch | Han Wui Then, Marko Radosavljevic, Sansaptak Dusgupta, Walid M. Hafez | 2022-11-01 |
| 11450617 | Transmission line structures for III-N devices | Han Wui Then, Marko Radosavljevic, Sansaptak Dasgupta, Nidhi Nidhi, Rahul Ramaswamy +2 more | 2022-09-20 |
| 11437255 | Epitaxial III-N nanoribbon structures for device fabrication | Sansaptak Dasgupta, Marko Radosavljevic, Han Wui Then, Kevin Lin | 2022-09-06 |
| 11430873 | Self aligned gate connected plates for group III-Nitride devices and methods of fabrication | Walid M. Hafez, Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic | 2022-08-30 |
| 11404407 | Implants to enlarge Schottky diode cross-sectional area for lateral current conduction | Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Walid M. Hafez | 2022-08-02 |
| 11393777 | Microelectronic assemblies | Adel A. Elsherbini, Patrick Morrow, Henning Braunisch, Kimin Jun, Brennen Mueller +2 more | 2022-07-19 |
| 11387329 | Tri-gate architecture multi-nanowire confined transistor | Han Wui Then, Marko Radosavljevic, Sansaptak Dasgupta, Walid M. Hafez | 2022-07-12 |
| 11387327 | Silicide for group III-Nitride devices and methods of fabrication | Sansaptak Dasgupta, Marko Radosavljevic, Han Wui Then, Walid M. Hafez | 2022-07-12 |
| 11380679 | FET capacitor circuit architectures for tunable load and input matching | Han Wui Then, Marko Radosavljevic, Sansaptak Dasgupta, Walid M. Hafez, Nicholas James Harold McKubre | 2022-07-05 |
| 11362082 | Implanted substrate contact for in-process charging control | Han Wui Then, Walid M. Hafez, Marko Radosavljevic, Sansaptak Dasgupta | 2022-06-14 |
| 11348897 | Microelectronic assemblies | Adel A. Elsherbini, Henning Braunisch, Aleksandar Aleksov, Shawna M. Liff, Johanna M. Swan +3 more | 2022-05-31 |
| 11342232 | Fabrication of Schottky barrier diode using lateral epitaxial overgrowth | Sansaptak Dasgupta, Marko Radosavljevic, Han Wui Then, Walid M. Hafez | 2022-05-24 |
| 11335777 | Integrated circuit components with substrate cavities | Kevin Lin, Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Ibrahim Ban | 2022-05-17 |
| 11335800 | Work function based approaches to transistor threshold voltage tuning | Han Wui Then, Marko Radosavljevic, Sansaptak Dasgupta, Walid M. Hafez | 2022-05-17 |
| 11329132 | Transistor with polarization layer superlattice for target threshold voltage tuning | Marko Radosavljevic, Han Wui Then, Sansaptak Dasgupta, Walid M. Hafez | 2022-05-10 |
| 11251156 | Fabrication and use of through silicon vias on double sided interconnect device | Brennen Mueller, Patrick Morrow, Kimin Jun, Daniel Pantuso | 2022-02-15 |
| 11218133 | Film bulk acoustic resonator (FBAR) devices for high frequency RF filters | Sansaptak Dasgupta, Bruce A. Block, Han Wui Then, Marko Radosavljevic | 2022-01-04 |