| 11189532 |
Dual width finned semiconductor structure |
Yi Song, Jay William Strane, Eric R. Miller, Fee Li Lie |
2021-11-30 |
| 11164958 |
Nanosheet transistor having a strained channel with strain-preserving multi-segmented source/drain regions |
Shogo Mochizuki, Nicolas Loubet, Zhenxing Bi |
2021-11-02 |
| 11114382 |
Middle-of-line interconnect having low metal-to-metal interface resistance |
Alex Varghese, Su Chen Fan |
2021-09-07 |
| 11056537 |
Self-aligned gate contact integration with metal resistor |
Xin Miao, Ruilong Xie, Kangguo Cheng |
2021-07-06 |
| 10937892 |
Nano multilayer carbon-rich low-k spacer |
Donald F. Canaperi, Thomas J. Haigh, Jr., Eric R. Miller, Son V. Nguyen |
2021-03-02 |
| 10910273 |
Forming shallow trench isolation regions for nanosheet field-effect transistor devices using sacrificial epitaxial layer |
Nicolas Loubet, Choonghyun Lee |
2021-02-02 |