Issued Patents 2021
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11189532 | Dual width finned semiconductor structure | Yi Song, Jay William Strane, Fee Li Lie, Richard A. Conti | 2021-11-30 |
| 11152266 | Vertical tunneling field effect transistor with dual liner bottom spacer | Marc A. Bergendahl, Kangguo Cheng, Sean Teehan, John R. Sporre | 2021-10-19 |
| 11127815 | Semiconductor device and method of forming the semiconductor device | Marc A. Bergendahl, Gauri Karve, Fee Li Lie, Robert R. Robison, John R. Sporre +1 more | 2021-09-21 |
| 11075299 | Transistor gate having tapered segments positioned above the fin channel | Gauri Karve, Marc A. Bergendahl, Fee Li Lie, Kangguo Cheng, Sean Teehan | 2021-07-27 |
| 11043581 | Nanosheet channel-to-source and drain isolation | Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, John R. Sporre, Sean Teehan | 2021-06-22 |
| 10985025 | Fin cut profile using fin base liner | Stuart A. Sieg, Yann Mignot, Indira Seshadri, Christopher J. Waskiewicz | 2021-04-20 |
| 10937892 | Nano multilayer carbon-rich low-k spacer | Donald F. Canaperi, Richard A. Conti, Thomas J. Haigh, Jr., Son V. Nguyen | 2021-03-02 |
| 10937810 | Sub-fin removal for SOI like isolation with uniform active fin height | Marc A. Bergendahl, Kangguo Cheng, Gauri Karve, Fee Li Lie, John R. Sporre +1 more | 2021-03-02 |
| 10886271 | Fabrication of fin field effect transistors for complementary metal oxide semiconductor devices including separate n-type and p-type source/drains using a single spacer deposition | Kangguo Cheng, Fee Li Lie, Sean Teehan | 2021-01-05 |