Issued Patents 2021
Showing 25 most recent of 30 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11205699 | Epitaxial semiconductor material regions for transistor devices and methods of forming same | Arkadiusz Malinowski, Baofu Zhu, Frank W. Mont, Ali Razavieh | 2021-12-21 |
| 11201152 | Method, apparatus, and system for fin-over-nanosheet complementary field-effect-transistor | Ruilong Xie, Steven R. Soss, Steven Bentley, Daniel Chanemougame, Bipul C. Paul +1 more | 2021-12-14 |
| 11195746 | Nanosheet transistor with self-aligned dielectric pillar | Ruilong Xie, Kangguo Cheng | 2021-12-07 |
| 11177632 | Augmented semiconductor lasers with spontaneous emissions blockage | Kangguo Cheng, Ruilong Xie, Chanro Park | 2021-11-16 |
| 11171044 | Planarization controllability for interconnect structures | Ruilong Xie, Chanro Park, Kangguo Cheng, Chih-Chao Yang | 2021-11-09 |
| 11164867 | Fin-type field-effect transistors over one or more buried polycrystalline layers | Siva P. Adusumilli, Ruilong Xie, Anthony K. Stamper | 2021-11-02 |
| 11158574 | Methods of forming a conductive contact structure to an embedded memory device on an IC product and a corresponding IC product | Nicholas V. LiCausi, Keith Donegan, Hyung Woo Kim | 2021-10-26 |
| 11121087 | Methods of forming a conductive contact structure to an embedded memory device on an IC product and a corresponding IC product | Nicholas V. LiCausi, Keith Donegan, Hyung Woo Kim | 2021-09-14 |
| 11121233 | Forming nanosheet transistor using sacrificial spacer and inner spacers | Kangguo Cheng, Nicolas Loubet | 2021-09-14 |
| 11107827 | Integration of split gate metal-oxide-nitride-oxide-semiconductor memory with vertical FET | Ruilong Xie, Kangguo Cheng | 2021-08-31 |
| 11101348 | Nanosheet field effect transistor with spacers between sheets | Ruilong Xie, Nigel G. Cave, Steven R. Soss, Daniel Chanemougame, Steven Bentley +2 more | 2021-08-24 |
| 11094784 | Gate-all-around field effect transistor having stacked U shaped channels configured to improve the effective width of the transistor | Kangguo Cheng, Ruilong Xie, Chanro Park, Tenko Yamashita | 2021-08-17 |
| 11094803 | Nanosheet device with tall suspension and tight contacted gate poly-pitch | Ruilong Xie, Ardasheir Rahman, Veeraraghavan S. Basker, Alexander Reznicek | 2021-08-17 |
| 11094794 | Air spacer structures | Ali Razavieh, Haiting Wang | 2021-08-17 |
| 11069819 | Field-effect transistors with channel regions that include a two-dimensional material on a mandrel | — | 2021-07-20 |
| 11069744 | Steep-switch vertical field effect transistor | Daniel Chanemougame, Nicolas Loubet, Ruilong Xie | 2021-07-20 |
| 11049934 | Transistor comprising a matrix of nanowires and methods of making such a transistor | Ali Razavieh, Bradley Morgenfeld | 2021-06-29 |
| 11043411 | Integration of air spacer with self-aligned contact in transistor | Chanro Park, Ruilong Xie, Kangguo Cheng | 2021-06-22 |
| 11011638 | Transistor having airgap spacer around gate structure | Ruilong Xie, Kangguo Cheng, Chanro Park | 2021-05-18 |
| 10991808 | Steep-switch field effect transistor with integrated bi-stable resistive system | Nicolas Loubet, Ruilong Xie, Daniel Chanemougame, Ali Razavieh, Kangguo Cheng | 2021-04-27 |
| 10964750 | Steep-switch field effect transistor with integrated bi-stable resistive system | Nicolas Loubet, Ruilong Xie, Daniel Chanemougame, Ali Razavieh, Kangguo Cheng | 2021-03-30 |
| 10957799 | Transistor channel having vertically stacked nanosheets coupled by fin-shaped bridge regions | Ruilong Xie, Chanro Park, Edward J. Nowak, Yi Qi, Kangguo Cheng +1 more | 2021-03-23 |
| 10950610 | Asymmetric gate cut isolation for SRAM | Bipul C. Paul, Ruilong Xie, Daniel Chanemougame, Hui Zang | 2021-03-16 |
| 10923590 | Wrap-around contact for vertical field effect transistors | Kangguo Cheng, Chanro Park, Ruilong Xie | 2021-02-16 |
| 10909443 | Neuromorphic circuit structure and method to form same | Edward J. Nowak, Siva P. Adusumilli, Ruilong Xie | 2021-02-02 |