Issued Patents 2021
Showing 76–95 of 95 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10937883 | Vertical transport FETs having a gradient threshold voltage | Choonghyun Lee, Jingyun Zhang, Pouya Hashemi, Alexander Reznicek | 2021-03-02 |
| 10930762 | Multiple work function nanosheet field effect transistor using sacrificial silicon germanium growth | Choonghyun Lee, Pouya Hashemi | 2021-02-23 |
| 10923403 | Co-integration of high carrier mobility PFET and NFET devices on the same substrate using low temperature condensation | Pouya Hashemi, Choonghyun Lee | 2021-02-16 |
| 10915811 | Intercalation cells for multi-task learning | Jianshi Tang, Praneet Adusumilli, Reinaldo Vega | 2021-02-09 |
| 10916699 | Resistive memory crossbar array employing selective barrier layer growth | Chih-Chao Yang, Lawrence A. Clevenger | 2021-02-09 |
| 10916659 | Asymmetric threshold voltage FinFET device by partial channel doping variation | Alexander Reznicek, Choonghyun Lee, Pouya Hashemi, Jingyun Zhang | 2021-02-09 |
| 10916432 | Formation of pure silicon oxide interfacial layer on silicon-germanium channel field effect transistor device | Pouya Hashemi, Hemanth Jagannathan, Choonghyun Lee, Vijay Narayanan | 2021-02-09 |
| 10907702 | Transmission device | Masaki Nagata, Yusuke Suzuki, Keisuke Suzuki, Yuji Ueno, Takeshi Kimura | 2021-02-02 |
| 10903424 | Resistive RAM cell structure for gradual set programming | Praneet Adusumilli, Jianshi Tang, Ramachandran Muralidhar | 2021-01-26 |
| 10903425 | Oxygen vacancy and filament-loss protection for resistive switching devices | Hiroyuki Miyazoe, Seyoung Kim, Vijay Narayanan | 2021-01-26 |
| 10903421 | Controlling filament formation and location in a resistive random-access memory device | Dexin Kong, Juntao Li, Kangguo Cheng | 2021-01-26 |
| 10896962 | Asymmetric threshold voltages in semiconductor devices | Alexander Reznicek, Jingyun Zhang, Choonghyun Lee, Pouya Hashemi | 2021-01-19 |
| 10896965 | Formation of wrap-around-contact to reduce contact resistivity | Adra Carr, Jingyun Zhang, Choonghyun Lee, Pouya Hashemi | 2021-01-19 |
| 10892408 | Multivalent oxide cap for analog switching resistive memory | Marwan H. Khater, Seyoung Kim, Hiroyuki Miyazoe | 2021-01-12 |
| 10886334 | Vertical array of resistive switching devices having a tunable oxygen vacancy concentration | Choonghyun Lee | 2021-01-05 |
| 10886467 | CBRAM by subtractive etching of metals | Hiroyuki Miyazoe, Qing Cao, John Rozen | 2021-01-05 |
| 10886376 | Formation of wrap-around-contact to reduce contact resistivity | Adra Carr, Jingyun Zhang, Choonghyun Lee, Pouya Hashemi | 2021-01-05 |
| 10886369 | Formation of self-limited inner spacer for gate-all-around nanosheet FET | Jingyun Zhang, Choonghyun Lee, Alexander Reznicek, Pouya Hashemi | 2021-01-05 |
| 10886362 | Multilayer dielectric for metal-insulator-metal capacitor (MIMCAP) capacitance and leakage improvement | Eduard A. Cartier, Hemanth Jagannathan, Paul C. Jamison | 2021-01-05 |
| 10885979 | Paired intercalation cells for drift migration | Jianshi Tang, Praneet Adusumilli, Reinaldo Vega | 2021-01-05 |